Semimetal-semiconductor rectifiers for sensitive room-temperature microwave detectors
In contrast to traditional metal-semiconductor (i.e., Schottky) junctions, ErAs : InAlGaAs heterojunctions have recently been shown to provide highly "engineerable" electrical rectification characteristics through the tuning of the Schottky barrier height and differential resistance, while...
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| Veröffentlicht in: | Applied physics letters 2005-10, Vol.87 (16), p.163506-163506-3 |
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| container_title | Applied physics letters |
| container_volume | 87 |
| creator | Young, A. C. Zimmerman, J. D. Brown, E. R. Gossard, A. C. |
| description | In contrast to traditional metal-semiconductor (i.e., Schottky) junctions,
ErAs
:
InAlGaAs
heterojunctions have recently been shown to provide highly "engineerable" electrical rectification characteristics through the tuning of the Schottky barrier height and differential resistance, while maintaining the very low specific capacitance for which Schottky diodes are famous. We demonstrate that these new rectifiers can operate effectively at zero bias and can be extremely sensitive at microwave frequencies. We report a tangential sensitivity of
−
63
dBm
at 3.1 GHz in an 8.0 KHz bandwidth, corresponding to a noise-equivalent power (NEP) of
8.9
×
10
−
13
W
∕
Hz
1
∕
2
. We attribute this noise performance to the high rf-to-dc current responsivity
(
∼
8
A
∕
W
)
, zero bias operation, and noise source reduction. The new diodes are found to be
∼
19
dB
more sensitive than the best available Hewlett-Packard zero-bias diodes at comparable frequencies. |
| doi_str_mv | 10.1063/1.2112201 |
| format | Article |
| fullrecord | <record><control><sourceid>scitation_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_2112201</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>apl</sourcerecordid><originalsourceid>FETCH-LOGICAL-c350t-596a7abe38ae5a09f179b4d8b5fb015468af9d9de8d6aed7eda706f0031c08123</originalsourceid><addsrcrecordid>eNp1kE1LAzEQhoMouFYP_oO9ekid2TT7cRGk-AUFD9rzMruZQKS7W5JU8d-b0qInTzMv877DzCPENcIcoVS3OC8QiwLwRGQIVSUVYn0qMgBQsmw0nouLED6S1IVSmVi_8eAGjrSRIXX9NJpdHyefe-6js459yG2Sgcfgovvk3E_TICMPW_YUd57zlPLTF6WR4cj7cLgUZ5Y2ga-OdSbWjw_vy2e5en16Wd6vZK80RKmbkirqWNXEmqCxWDXdwtSdth2gXpQ12cY0hmtTEpuKDVVQ2vQK9lBjoWbi5rA3XRCCZ9tuvRvIf7cI7Z5Hi-2RR_LeHbyhd5Gim8b_zb9Q2j8o6gdHPmqA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Semimetal-semiconductor rectifiers for sensitive room-temperature microwave detectors</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><creator>Young, A. C. ; Zimmerman, J. D. ; Brown, E. R. ; Gossard, A. C.</creator><creatorcontrib>Young, A. C. ; Zimmerman, J. D. ; Brown, E. R. ; Gossard, A. C.</creatorcontrib><description>In contrast to traditional metal-semiconductor (i.e., Schottky) junctions,
ErAs
:
InAlGaAs
heterojunctions have recently been shown to provide highly "engineerable" electrical rectification characteristics through the tuning of the Schottky barrier height and differential resistance, while maintaining the very low specific capacitance for which Schottky diodes are famous. We demonstrate that these new rectifiers can operate effectively at zero bias and can be extremely sensitive at microwave frequencies. We report a tangential sensitivity of
−
63
dBm
at 3.1 GHz in an 8.0 KHz bandwidth, corresponding to a noise-equivalent power (NEP) of
8.9
×
10
−
13
W
∕
Hz
1
∕
2
. We attribute this noise performance to the high rf-to-dc current responsivity
(
∼
8
A
∕
W
)
, zero bias operation, and noise source reduction. The new diodes are found to be
∼
19
dB
more sensitive than the best available Hewlett-Packard zero-bias diodes at comparable frequencies.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.2112201</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>American Institute of Physics</publisher><ispartof>Applied physics letters, 2005-10, Vol.87 (16), p.163506-163506-3</ispartof><rights>2005 American Institute of Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c350t-596a7abe38ae5a09f179b4d8b5fb015468af9d9de8d6aed7eda706f0031c08123</citedby><cites>FETCH-LOGICAL-c350t-596a7abe38ae5a09f179b4d8b5fb015468af9d9de8d6aed7eda706f0031c08123</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.2112201$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,776,780,790,1553,4498,27901,27902,76126,76132</link.rule.ids></links><search><creatorcontrib>Young, A. C.</creatorcontrib><creatorcontrib>Zimmerman, J. D.</creatorcontrib><creatorcontrib>Brown, E. R.</creatorcontrib><creatorcontrib>Gossard, A. C.</creatorcontrib><title>Semimetal-semiconductor rectifiers for sensitive room-temperature microwave detectors</title><title>Applied physics letters</title><description>In contrast to traditional metal-semiconductor (i.e., Schottky) junctions,
ErAs
:
InAlGaAs
heterojunctions have recently been shown to provide highly "engineerable" electrical rectification characteristics through the tuning of the Schottky barrier height and differential resistance, while maintaining the very low specific capacitance for which Schottky diodes are famous. We demonstrate that these new rectifiers can operate effectively at zero bias and can be extremely sensitive at microwave frequencies. We report a tangential sensitivity of
−
63
dBm
at 3.1 GHz in an 8.0 KHz bandwidth, corresponding to a noise-equivalent power (NEP) of
8.9
×
10
−
13
W
∕
Hz
1
∕
2
. We attribute this noise performance to the high rf-to-dc current responsivity
(
∼
8
A
∕
W
)
, zero bias operation, and noise source reduction. The new diodes are found to be
∼
19
dB
more sensitive than the best available Hewlett-Packard zero-bias diodes at comparable frequencies.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><recordid>eNp1kE1LAzEQhoMouFYP_oO9ekid2TT7cRGk-AUFD9rzMruZQKS7W5JU8d-b0qInTzMv877DzCPENcIcoVS3OC8QiwLwRGQIVSUVYn0qMgBQsmw0nouLED6S1IVSmVi_8eAGjrSRIXX9NJpdHyefe-6js459yG2Sgcfgovvk3E_TICMPW_YUd57zlPLTF6WR4cj7cLgUZ5Y2ga-OdSbWjw_vy2e5en16Wd6vZK80RKmbkirqWNXEmqCxWDXdwtSdth2gXpQ12cY0hmtTEpuKDVVQ2vQK9lBjoWbi5rA3XRCCZ9tuvRvIf7cI7Z5Hi-2RR_LeHbyhd5Gim8b_zb9Q2j8o6gdHPmqA</recordid><startdate>20051017</startdate><enddate>20051017</enddate><creator>Young, A. C.</creator><creator>Zimmerman, J. D.</creator><creator>Brown, E. R.</creator><creator>Gossard, A. C.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20051017</creationdate><title>Semimetal-semiconductor rectifiers for sensitive room-temperature microwave detectors</title><author>Young, A. C. ; Zimmerman, J. D. ; Brown, E. R. ; Gossard, A. C.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c350t-596a7abe38ae5a09f179b4d8b5fb015468af9d9de8d6aed7eda706f0031c08123</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2005</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Young, A. C.</creatorcontrib><creatorcontrib>Zimmerman, J. D.</creatorcontrib><creatorcontrib>Brown, E. R.</creatorcontrib><creatorcontrib>Gossard, A. C.</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Young, A. C.</au><au>Zimmerman, J. D.</au><au>Brown, E. R.</au><au>Gossard, A. C.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Semimetal-semiconductor rectifiers for sensitive room-temperature microwave detectors</atitle><jtitle>Applied physics letters</jtitle><date>2005-10-17</date><risdate>2005</risdate><volume>87</volume><issue>16</issue><spage>163506</spage><epage>163506-3</epage><pages>163506-163506-3</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>In contrast to traditional metal-semiconductor (i.e., Schottky) junctions,
ErAs
:
InAlGaAs
heterojunctions have recently been shown to provide highly "engineerable" electrical rectification characteristics through the tuning of the Schottky barrier height and differential resistance, while maintaining the very low specific capacitance for which Schottky diodes are famous. We demonstrate that these new rectifiers can operate effectively at zero bias and can be extremely sensitive at microwave frequencies. We report a tangential sensitivity of
−
63
dBm
at 3.1 GHz in an 8.0 KHz bandwidth, corresponding to a noise-equivalent power (NEP) of
8.9
×
10
−
13
W
∕
Hz
1
∕
2
. We attribute this noise performance to the high rf-to-dc current responsivity
(
∼
8
A
∕
W
)
, zero bias operation, and noise source reduction. The new diodes are found to be
∼
19
dB
more sensitive than the best available Hewlett-Packard zero-bias diodes at comparable frequencies.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.2112201</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 2005-10, Vol.87 (16), p.163506-163506-3 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_2112201 |
| source | AIP Journals Complete; AIP Digital Archive |
| title | Semimetal-semiconductor rectifiers for sensitive room-temperature microwave detectors |
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