Ferroelectric properties of sol-gel derived Ca modified PbZr0.52Ti0.48O3 films
In this letter, we report the ferroelectric properties and leakage current characteristics of Ca modified PbZr0.52Ti0.48O3 (PCZT) films prepared by a sol-gel process. The PCZT film of thickness ∼1μm shows excellent ferroelectric properties in terms of large remnant polarization of ∼30μC∕cm2 (Ec∼200k...
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| Veröffentlicht in: | Applied physics letters 2005-09, Vol.87 (13) |
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| container_title | Applied physics letters |
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| creator | Ezhilvalavan, S. Samper, Victor D. |
| description | In this letter, we report the ferroelectric properties and leakage current characteristics of Ca modified PbZr0.52Ti0.48O3 (PCZT) films prepared by a sol-gel process. The PCZT film of thickness ∼1μm shows excellent ferroelectric properties in terms of large remnant polarization of ∼30μC∕cm2 (Ec∼200kV∕cm), high saturation polarization of about 51μC∕cm2 for an applied field of 915kV∕cm, fatigue free characteristics up to ⩾1010 switching cycles, and a low leakage current density of 5×10−8A∕cm2 at 100kV∕cm. X-ray diffraction, atomic force, and scanning electron microscope investigations indicate that PCZT films deposited on PbTiO3 layers exhibit a dense, well-crystallized microstructure having random orientations and a rather smooth surface morphology. |
| doi_str_mv | 10.1063/1.2041820 |
| format | Article |
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The PCZT film of thickness ∼1μm shows excellent ferroelectric properties in terms of large remnant polarization of ∼30μC∕cm2 (Ec∼200kV∕cm), high saturation polarization of about 51μC∕cm2 for an applied field of 915kV∕cm, fatigue free characteristics up to ⩾1010 switching cycles, and a low leakage current density of 5×10−8A∕cm2 at 100kV∕cm. X-ray diffraction, atomic force, and scanning electron microscope investigations indicate that PCZT films deposited on PbTiO3 layers exhibit a dense, well-crystallized microstructure having random orientations and a rather smooth surface morphology.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.2041820</identifier><language>eng</language><ispartof>Applied physics letters, 2005-09, Vol.87 (13)</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c159t-d4dae6977c59cd1de8e168e82fd9d5bdd9cdf7e620a19676741d8b87a9631443</citedby><cites>FETCH-LOGICAL-c159t-d4dae6977c59cd1de8e168e82fd9d5bdd9cdf7e620a19676741d8b87a9631443</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Ezhilvalavan, S.</creatorcontrib><creatorcontrib>Samper, Victor D.</creatorcontrib><title>Ferroelectric properties of sol-gel derived Ca modified PbZr0.52Ti0.48O3 films</title><title>Applied physics letters</title><description>In this letter, we report the ferroelectric properties and leakage current characteristics of Ca modified PbZr0.52Ti0.48O3 (PCZT) films prepared by a sol-gel process. The PCZT film of thickness ∼1μm shows excellent ferroelectric properties in terms of large remnant polarization of ∼30μC∕cm2 (Ec∼200kV∕cm), high saturation polarization of about 51μC∕cm2 for an applied field of 915kV∕cm, fatigue free characteristics up to ⩾1010 switching cycles, and a low leakage current density of 5×10−8A∕cm2 at 100kV∕cm. X-ray diffraction, atomic force, and scanning electron microscope investigations indicate that PCZT films deposited on PbTiO3 layers exhibit a dense, well-crystallized microstructure having random orientations and a rather smooth surface morphology.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><recordid>eNotkE1LxDAURYMoWEcX_oNsXaTmNc3XUorjCIPjois3pU1eJNLSkhTBf2_FWd17z-IuDiH3wEvgSjxCWfEaTMUvSAFcayYAzCUpOOeCKSvhmtzk_LVNWQlRkLc9pjTjiG5N0dElzQumNWKmc6B5HtknjtRjit_oadPTafYxxK2_Dx-Jl7JqIy9rcxI0xHHKt-Qq9GPGu3PuSLt_bpsDO55eXpunI3Mg7cp87XtUVmsnrfPg0SAog6YK3no5eL_RoFFVvAertNI1eDMY3VsloK7Fjjz837o055wwdEuKU59-OuDdn4cOurMH8Qu-d05A</recordid><startdate>20050926</startdate><enddate>20050926</enddate><creator>Ezhilvalavan, S.</creator><creator>Samper, Victor D.</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20050926</creationdate><title>Ferroelectric properties of sol-gel derived Ca modified PbZr0.52Ti0.48O3 films</title><author>Ezhilvalavan, S. ; Samper, Victor D.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c159t-d4dae6977c59cd1de8e168e82fd9d5bdd9cdf7e620a19676741d8b87a9631443</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2005</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ezhilvalavan, S.</creatorcontrib><creatorcontrib>Samper, Victor D.</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ezhilvalavan, S.</au><au>Samper, Victor D.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Ferroelectric properties of sol-gel derived Ca modified PbZr0.52Ti0.48O3 films</atitle><jtitle>Applied physics letters</jtitle><date>2005-09-26</date><risdate>2005</risdate><volume>87</volume><issue>13</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>In this letter, we report the ferroelectric properties and leakage current characteristics of Ca modified PbZr0.52Ti0.48O3 (PCZT) films prepared by a sol-gel process. The PCZT film of thickness ∼1μm shows excellent ferroelectric properties in terms of large remnant polarization of ∼30μC∕cm2 (Ec∼200kV∕cm), high saturation polarization of about 51μC∕cm2 for an applied field of 915kV∕cm, fatigue free characteristics up to ⩾1010 switching cycles, and a low leakage current density of 5×10−8A∕cm2 at 100kV∕cm. X-ray diffraction, atomic force, and scanning electron microscope investigations indicate that PCZT films deposited on PbTiO3 layers exhibit a dense, well-crystallized microstructure having random orientations and a rather smooth surface morphology.</abstract><doi>10.1063/1.2041820</doi></addata></record> |
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| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 2005-09, Vol.87 (13) |
| issn | 0003-6951 1077-3118 |
| language | eng |
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| source | AIP Journals Complete; AIP Digital Archive |
| title | Ferroelectric properties of sol-gel derived Ca modified PbZr0.52Ti0.48O3 films |
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