Enhancement of electron injection in inverted top-emitting organic light-emitting diodes using an insulating magnesium oxide buffer layer

Enhancement of electron injection in inverted top-emitting organic light-emitting diodes using an insulating magnesium oxide buffer layer

We report the enhancement of the electron injection by inserting a 1-nm-thick magnesium oxide (MgO) buffer layer between Al cathode and tris (8-hydroxyquinoline) aluminum in an inverted top-emitting organic light-emitting diode (OLED). The turn-on voltage of OLEDs decreased from 10 to 6 V and the lu...

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Veröffentlicht in:Applied physics letters 2005-08, Vol.87 (8)
Hauptverfasser: Choi, Ho Won, Kim, Soo Young, Kim, Woong-Kwon, Lee, Jong-Lam
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creator Choi, Ho Won
Kim, Soo Young
Kim, Woong-Kwon
Lee, Jong-Lam
description We report the enhancement of the electron injection by inserting a 1-nm-thick magnesium oxide (MgO) buffer layer between Al cathode and tris (8-hydroxyquinoline) aluminum in an inverted top-emitting organic light-emitting diode (OLED). The turn-on voltage of OLEDs decreased from 10 to 6 V and the luminance increased about 61% as the MgO interfacial layer was employed. The MgO interfacial layer played a role in reducing the energy barrier of electron injection, leading to the reduction of the turn-on voltage and the enhancement of luminance.
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title Enhancement of electron injection in inverted top-emitting organic light-emitting diodes using an insulating magnesium oxide buffer layer
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