Magnetization-graded ferromagnets: The magnetic analogs of semiconductor junction elements
Compositionally graded ferrites are formed as the magnetic analogs of semiconductor junction devices. The internal, or the “built-in,” magnetic field is intrinsic to the structure and is determined from ferromagnetic resonance microscopy. Magnetic analysis of a nickel–zinc–ferrite system in terms of...
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Veröffentlicht in: | Applied physics letters 2005-08, Vol.87 (8) |
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creator | Mantese, Joseph V. Micheli, Adolph L. Schubring, Norman W. Hayes, R. W. Srinivasan, G. Alpay, S. P. |
description | Compositionally graded ferrites are formed as the magnetic analogs of semiconductor junction devices. The internal, or the “built-in,” magnetic field is intrinsic to the structure and is determined from ferromagnetic resonance microscopy. Magnetic analysis of a nickel–zinc–ferrite system in terms of its spatially dependent order parameter, the magnetization, yields a value for the internal magnetic field consistent with experimental observations. Our results are extended to the general class of ferroic and other “smart” materials via a spatially dependent free-energy potential. |
doi_str_mv | 10.1063/1.2012526 |
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W.</creatorcontrib><creatorcontrib>Srinivasan, G.</creatorcontrib><creatorcontrib>Alpay, S. P.</creatorcontrib><title>Magnetization-graded ferromagnets: The magnetic analogs of semiconductor junction elements</title><title>Applied physics letters</title><description>Compositionally graded ferrites are formed as the magnetic analogs of semiconductor junction devices. The internal, or the “built-in,” magnetic field is intrinsic to the structure and is determined from ferromagnetic resonance microscopy. Magnetic analysis of a nickel–zinc–ferrite system in terms of its spatially dependent order parameter, the magnetization, yields a value for the internal magnetic field consistent with experimental observations. 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P.</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20050822</creationdate><title>Magnetization-graded ferromagnets: The magnetic analogs of semiconductor junction elements</title><author>Mantese, Joseph V. ; Micheli, Adolph L. ; Schubring, Norman W. ; Hayes, R. W. ; Srinivasan, G. ; Alpay, S. P.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c295t-4a826d6ae003e08da4066446740b3b7424455d91ec0779d05d67e15c26f6845a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2005</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Mantese, Joseph V.</creatorcontrib><creatorcontrib>Micheli, Adolph L.</creatorcontrib><creatorcontrib>Schubring, Norman W.</creatorcontrib><creatorcontrib>Hayes, R. W.</creatorcontrib><creatorcontrib>Srinivasan, G.</creatorcontrib><creatorcontrib>Alpay, S. P.</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Mantese, Joseph V.</au><au>Micheli, Adolph L.</au><au>Schubring, Norman W.</au><au>Hayes, R. W.</au><au>Srinivasan, G.</au><au>Alpay, S. P.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Magnetization-graded ferromagnets: The magnetic analogs of semiconductor junction elements</atitle><jtitle>Applied physics letters</jtitle><date>2005-08-22</date><risdate>2005</risdate><volume>87</volume><issue>8</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>Compositionally graded ferrites are formed as the magnetic analogs of semiconductor junction devices. The internal, or the “built-in,” magnetic field is intrinsic to the structure and is determined from ferromagnetic resonance microscopy. Magnetic analysis of a nickel–zinc–ferrite system in terms of its spatially dependent order parameter, the magnetization, yields a value for the internal magnetic field consistent with experimental observations. Our results are extended to the general class of ferroic and other “smart” materials via a spatially dependent free-energy potential.</abstract><doi>10.1063/1.2012526</doi></addata></record> |
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title | Magnetization-graded ferromagnets: The magnetic analogs of semiconductor junction elements |
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