Oxygen defects and Fermi level location in metal-hafnium oxide-silicon structures

We describe an in situ method for measuring the band bending of Si substrates in complex metal-oxide-semiconductor systems using femtosecond pump-probe photoelectron spectroscopy. Following deposition of metal layers (Pt, Re, or Re oxide) on the high-k dielectric HfO2, measurement of the band bendin...

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Veröffentlicht in:	Applied physics letters 2005-08, Vol.87 (7)
Hauptverfasser:	Lim, Daeyoung, Haight, Richard, Copel, Matthew, Cartier, Eduard
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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