Direct studies of domain switching dynamics in thin film ferroelectric capacitors

An experimental approach for direct studies of the polarization reversal mechanism in thin film ferroelectric capacitors based on piezoresponse force microscopy (PFM) in conjunction with pulse switching capabilities is presented. Instant domain configurations developing in a 3 × 3 μ m 2 capacitor at...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Applied physics letters 2005-08, Vol.87 (8), p.082902-082902-3
Hauptverfasser: Gruverman, A., Rodriguez, B. J., Dehoff, C., Waldrep, J. D., Kingon, A. I., Nemanich, R. J., Cross, J. S.
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 082902-3
container_issue 8
container_start_page 082902
container_title Applied physics letters
container_volume 87
creator Gruverman, A.
Rodriguez, B. J.
Dehoff, C.
Waldrep, J. D.
Kingon, A. I.
Nemanich, R. J.
Cross, J. S.
description An experimental approach for direct studies of the polarization reversal mechanism in thin film ferroelectric capacitors based on piezoresponse force microscopy (PFM) in conjunction with pulse switching capabilities is presented. Instant domain configurations developing in a 3 × 3 μ m 2 capacitor at different stages of the polarization reversal process have been registered using step-by-step switching and subsequent PFM imaging. The developed approach allows direct comparison of experimentally measured microscopic switching behavior with parameters used by phenomenological switching models. It has been found that in the low field regime (just above the threshold value) used in the present study, the mechanism of polarization reversal changes during the switching cycle from the initial nucleation-dominated process to the lateral domain expansion at the later stages. The classical nucleation model of Kolmogorov-Avrami-Ishibashi (KAI) provides reasonable approximation for the nucleation-dominated stage of switching but is inapplicable to the slow switching stage. It has been suggested that the switching dynamics can be approximated by averaging the KAI model over a broad distribution of switching times.
doi_str_mv 10.1063/1.2010605
format Article
fullrecord <record><control><sourceid>scitation_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_2010605</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>apl</sourcerecordid><originalsourceid>FETCH-LOGICAL-c385t-ce21cf00127ffc55d03e924332117aa64fdfbbe247d6655ece3812c05cb86b9e3</originalsourceid><addsrcrecordid>eNp1kE1LAzEQhoMoWKsH_0GuHrZmks1-XASpn1AQQc8hO0k00t2UJCL990a6V08z8_LMMDyEXAJbAWvENaw4Kw2TR2QBrG0rAdAdkwVjTFRNL-GUnKX0VUbJhViQ1zsfLWaa8rfxNtHgqAmj9hNNPz7jp58-qNlPevSYaElzSajz25E6G2Ow27IcPVLUO40-h5jOyYnT22Qv5rok7w_3b-unavPy-Ly-3VQoOpkrtBzQMQa8dQ6lNEzYntdCcIBW66Z2xg2D5XVrmkZKi1Z0wJFJHLpm6K1YkqvDXYwhpWid2kU_6rhXwNSfCwVqdlHYmwObyo86-zD9Dx-EqFmICk6ZIH4B8JdniA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Direct studies of domain switching dynamics in thin film ferroelectric capacitors</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><creator>Gruverman, A. ; Rodriguez, B. J. ; Dehoff, C. ; Waldrep, J. D. ; Kingon, A. I. ; Nemanich, R. J. ; Cross, J. S.</creator><creatorcontrib>Gruverman, A. ; Rodriguez, B. J. ; Dehoff, C. ; Waldrep, J. D. ; Kingon, A. I. ; Nemanich, R. J. ; Cross, J. S.</creatorcontrib><description>An experimental approach for direct studies of the polarization reversal mechanism in thin film ferroelectric capacitors based on piezoresponse force microscopy (PFM) in conjunction with pulse switching capabilities is presented. Instant domain configurations developing in a 3 × 3 μ m 2 capacitor at different stages of the polarization reversal process have been registered using step-by-step switching and subsequent PFM imaging. The developed approach allows direct comparison of experimentally measured microscopic switching behavior with parameters used by phenomenological switching models. It has been found that in the low field regime (just above the threshold value) used in the present study, the mechanism of polarization reversal changes during the switching cycle from the initial nucleation-dominated process to the lateral domain expansion at the later stages. The classical nucleation model of Kolmogorov-Avrami-Ishibashi (KAI) provides reasonable approximation for the nucleation-dominated stage of switching but is inapplicable to the slow switching stage. It has been suggested that the switching dynamics can be approximated by averaging the KAI model over a broad distribution of switching times.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.2010605</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>American Institute of Physics</publisher><ispartof>Applied physics letters, 2005-08, Vol.87 (8), p.082902-082902-3</ispartof><rights>2005 American Institute of Physics</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c385t-ce21cf00127ffc55d03e924332117aa64fdfbbe247d6655ece3812c05cb86b9e3</citedby><cites>FETCH-LOGICAL-c385t-ce21cf00127ffc55d03e924332117aa64fdfbbe247d6655ece3812c05cb86b9e3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.2010605$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,776,780,790,1553,4498,27903,27904,76130,76136</link.rule.ids></links><search><creatorcontrib>Gruverman, A.</creatorcontrib><creatorcontrib>Rodriguez, B. J.</creatorcontrib><creatorcontrib>Dehoff, C.</creatorcontrib><creatorcontrib>Waldrep, J. D.</creatorcontrib><creatorcontrib>Kingon, A. I.</creatorcontrib><creatorcontrib>Nemanich, R. J.</creatorcontrib><creatorcontrib>Cross, J. S.</creatorcontrib><title>Direct studies of domain switching dynamics in thin film ferroelectric capacitors</title><title>Applied physics letters</title><description>An experimental approach for direct studies of the polarization reversal mechanism in thin film ferroelectric capacitors based on piezoresponse force microscopy (PFM) in conjunction with pulse switching capabilities is presented. Instant domain configurations developing in a 3 × 3 μ m 2 capacitor at different stages of the polarization reversal process have been registered using step-by-step switching and subsequent PFM imaging. The developed approach allows direct comparison of experimentally measured microscopic switching behavior with parameters used by phenomenological switching models. It has been found that in the low field regime (just above the threshold value) used in the present study, the mechanism of polarization reversal changes during the switching cycle from the initial nucleation-dominated process to the lateral domain expansion at the later stages. The classical nucleation model of Kolmogorov-Avrami-Ishibashi (KAI) provides reasonable approximation for the nucleation-dominated stage of switching but is inapplicable to the slow switching stage. It has been suggested that the switching dynamics can be approximated by averaging the KAI model over a broad distribution of switching times.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><recordid>eNp1kE1LAzEQhoMoWKsH_0GuHrZmks1-XASpn1AQQc8hO0k00t2UJCL990a6V08z8_LMMDyEXAJbAWvENaw4Kw2TR2QBrG0rAdAdkwVjTFRNL-GUnKX0VUbJhViQ1zsfLWaa8rfxNtHgqAmj9hNNPz7jp58-qNlPevSYaElzSajz25E6G2Ow27IcPVLUO40-h5jOyYnT22Qv5rok7w_3b-unavPy-Ly-3VQoOpkrtBzQMQa8dQ6lNEzYntdCcIBW66Z2xg2D5XVrmkZKi1Z0wJFJHLpm6K1YkqvDXYwhpWid2kU_6rhXwNSfCwVqdlHYmwObyo86-zD9Dx-EqFmICk6ZIH4B8JdniA</recordid><startdate>20050822</startdate><enddate>20050822</enddate><creator>Gruverman, A.</creator><creator>Rodriguez, B. J.</creator><creator>Dehoff, C.</creator><creator>Waldrep, J. D.</creator><creator>Kingon, A. I.</creator><creator>Nemanich, R. J.</creator><creator>Cross, J. S.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20050822</creationdate><title>Direct studies of domain switching dynamics in thin film ferroelectric capacitors</title><author>Gruverman, A. ; Rodriguez, B. J. ; Dehoff, C. ; Waldrep, J. D. ; Kingon, A. I. ; Nemanich, R. J. ; Cross, J. S.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c385t-ce21cf00127ffc55d03e924332117aa64fdfbbe247d6655ece3812c05cb86b9e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2005</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Gruverman, A.</creatorcontrib><creatorcontrib>Rodriguez, B. J.</creatorcontrib><creatorcontrib>Dehoff, C.</creatorcontrib><creatorcontrib>Waldrep, J. D.</creatorcontrib><creatorcontrib>Kingon, A. I.</creatorcontrib><creatorcontrib>Nemanich, R. J.</creatorcontrib><creatorcontrib>Cross, J. S.</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Gruverman, A.</au><au>Rodriguez, B. J.</au><au>Dehoff, C.</au><au>Waldrep, J. D.</au><au>Kingon, A. I.</au><au>Nemanich, R. J.</au><au>Cross, J. S.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Direct studies of domain switching dynamics in thin film ferroelectric capacitors</atitle><jtitle>Applied physics letters</jtitle><date>2005-08-22</date><risdate>2005</risdate><volume>87</volume><issue>8</issue><spage>082902</spage><epage>082902-3</epage><pages>082902-082902-3</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>An experimental approach for direct studies of the polarization reversal mechanism in thin film ferroelectric capacitors based on piezoresponse force microscopy (PFM) in conjunction with pulse switching capabilities is presented. Instant domain configurations developing in a 3 × 3 μ m 2 capacitor at different stages of the polarization reversal process have been registered using step-by-step switching and subsequent PFM imaging. The developed approach allows direct comparison of experimentally measured microscopic switching behavior with parameters used by phenomenological switching models. It has been found that in the low field regime (just above the threshold value) used in the present study, the mechanism of polarization reversal changes during the switching cycle from the initial nucleation-dominated process to the lateral domain expansion at the later stages. The classical nucleation model of Kolmogorov-Avrami-Ishibashi (KAI) provides reasonable approximation for the nucleation-dominated stage of switching but is inapplicable to the slow switching stage. It has been suggested that the switching dynamics can be approximated by averaging the KAI model over a broad distribution of switching times.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.2010605</doi><oa>free_for_read</oa></addata></record>
fulltext fulltext
identifier ISSN: 0003-6951
ispartof Applied physics letters, 2005-08, Vol.87 (8), p.082902-082902-3
issn 0003-6951
1077-3118
language eng
recordid cdi_crossref_primary_10_1063_1_2010605
source AIP Journals Complete; AIP Digital Archive
title Direct studies of domain switching dynamics in thin film ferroelectric capacitors
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-27T12%3A49%3A57IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-scitation_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Direct%20studies%20of%20domain%20switching%20dynamics%20in%20thin%20film%20ferroelectric%20capacitors&rft.jtitle=Applied%20physics%20letters&rft.au=Gruverman,%20A.&rft.date=2005-08-22&rft.volume=87&rft.issue=8&rft.spage=082902&rft.epage=082902-3&rft.pages=082902-082902-3&rft.issn=0003-6951&rft.eissn=1077-3118&rft.coden=APPLAB&rft_id=info:doi/10.1063/1.2010605&rft_dat=%3Cscitation_cross%3Eapl%3C/scitation_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true