Transport properties of p-type phosphorus-doped (Zn,Mg)O grown by pulsed-laser deposition

We report on carrier type in phosphorus-doped (Zn,Mg)O films grown by pulsed-laser deposition under a broad range of conditions. For film growth at 500°C, increasing the oxygen partial pressure from 20to200mTorr yielded a carrier type conversion from n to p type. Transport characteristics of as-grow...

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Veröffentlicht in:	Applied physics letters 2005-08, Vol.87 (7)
Hauptverfasser:	Li, Y. J., Heo, Y. W., Kwon, Y., Ip, K., Pearton, S. J., Norton, D. P.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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