Transport properties of p-type phosphorus-doped (Zn,Mg)O grown by pulsed-laser deposition
We report on carrier type in phosphorus-doped (Zn,Mg)O films grown by pulsed-laser deposition under a broad range of conditions. For film growth at 500°C, increasing the oxygen partial pressure from 20to200mTorr yielded a carrier type conversion from n to p type. Transport characteristics of as-grow...
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| Veröffentlicht in: | Applied physics letters 2005-08, Vol.87 (7) |
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| container_title | Applied physics letters |
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| creator | Li, Y. J. Heo, Y. W. Kwon, Y. Ip, K. Pearton, S. J. Norton, D. P. |
| description | We report on carrier type in phosphorus-doped (Zn,Mg)O films grown by pulsed-laser deposition under a broad range of conditions. For film growth at 500°C, increasing the oxygen partial pressure from 20to200mTorr yielded a carrier type conversion from n to p type. Transport characteristics of as-grown P-doped (Zn,Mg)O films were determined by Hall-effect measurements at room temperature. The P-doped (Zn,Mg)O films grown at 150mTorr oxygen partial pressure were marginally p type and exhibited a hole concentration of 2.7×1016cm−3, a mobility of 8.2cm2∕Vs, and a resistivity of 35Ωcm. The films exhibited good crystallinity with c-axis orientation. These results indicate the importance of oxidation conditions in realizing p-type (Zn,Mg)O films. |
| doi_str_mv | 10.1063/1.2010600 |
| format | Article |
| fullrecord | <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_2010600</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1063_1_2010600</sourcerecordid><originalsourceid>FETCH-LOGICAL-c295t-f9bb66e8be46775c32368445f78c64dff9fd509a16bcdf86bb6cbef32e4342f43</originalsourceid><addsrcrecordid>eNotUEtLAzEYDKJgrR78BzlaMDXv3T1K8QWVXupBL8vmVVfqJuTbIvvvjdjDMDPMMIdB6JrRJaNa3LElp0VQeoJmjFYVEYzVp2hGKRVEN4qdowuAr2IVF2KG3re5GyDFPOKUY_J57D3gGHAi45Q8Tp8RCvIBiCuxwzcfw-3rbrHBuxx_BmwmnA578I7sO_AZO58i9GMfh0t0FrqSXB15jt4eH7arZ7LePL2s7tfE8kaNJDTGaO1r46WuKmUFF7qWUoWqtlq6EJrgFG06po11odalbY0PgnspJA9SzNHif9fmCJB9aFPuv7s8tYy2f5-0rD1-In4BZ5xU2w</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Transport properties of p-type phosphorus-doped (Zn,Mg)O grown by pulsed-laser deposition</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><creator>Li, Y. J. ; Heo, Y. W. ; Kwon, Y. ; Ip, K. ; Pearton, S. J. ; Norton, D. P.</creator><creatorcontrib>Li, Y. J. ; Heo, Y. W. ; Kwon, Y. ; Ip, K. ; Pearton, S. J. ; Norton, D. P.</creatorcontrib><description>We report on carrier type in phosphorus-doped (Zn,Mg)O films grown by pulsed-laser deposition under a broad range of conditions. For film growth at 500°C, increasing the oxygen partial pressure from 20to200mTorr yielded a carrier type conversion from n to p type. Transport characteristics of as-grown P-doped (Zn,Mg)O films were determined by Hall-effect measurements at room temperature. The P-doped (Zn,Mg)O films grown at 150mTorr oxygen partial pressure were marginally p type and exhibited a hole concentration of 2.7×1016cm−3, a mobility of 8.2cm2∕Vs, and a resistivity of 35Ωcm. The films exhibited good crystallinity with c-axis orientation. These results indicate the importance of oxidation conditions in realizing p-type (Zn,Mg)O films.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.2010600</identifier><language>eng</language><ispartof>Applied physics letters, 2005-08, Vol.87 (7)</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c295t-f9bb66e8be46775c32368445f78c64dff9fd509a16bcdf86bb6cbef32e4342f43</citedby><cites>FETCH-LOGICAL-c295t-f9bb66e8be46775c32368445f78c64dff9fd509a16bcdf86bb6cbef32e4342f43</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Li, Y. J.</creatorcontrib><creatorcontrib>Heo, Y. W.</creatorcontrib><creatorcontrib>Kwon, Y.</creatorcontrib><creatorcontrib>Ip, K.</creatorcontrib><creatorcontrib>Pearton, S. J.</creatorcontrib><creatorcontrib>Norton, D. P.</creatorcontrib><title>Transport properties of p-type phosphorus-doped (Zn,Mg)O grown by pulsed-laser deposition</title><title>Applied physics letters</title><description>We report on carrier type in phosphorus-doped (Zn,Mg)O films grown by pulsed-laser deposition under a broad range of conditions. For film growth at 500°C, increasing the oxygen partial pressure from 20to200mTorr yielded a carrier type conversion from n to p type. Transport characteristics of as-grown P-doped (Zn,Mg)O films were determined by Hall-effect measurements at room temperature. The P-doped (Zn,Mg)O films grown at 150mTorr oxygen partial pressure were marginally p type and exhibited a hole concentration of 2.7×1016cm−3, a mobility of 8.2cm2∕Vs, and a resistivity of 35Ωcm. The films exhibited good crystallinity with c-axis orientation. These results indicate the importance of oxidation conditions in realizing p-type (Zn,Mg)O films.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><recordid>eNotUEtLAzEYDKJgrR78BzlaMDXv3T1K8QWVXupBL8vmVVfqJuTbIvvvjdjDMDPMMIdB6JrRJaNa3LElp0VQeoJmjFYVEYzVp2hGKRVEN4qdowuAr2IVF2KG3re5GyDFPOKUY_J57D3gGHAi45Q8Tp8RCvIBiCuxwzcfw-3rbrHBuxx_BmwmnA578I7sO_AZO58i9GMfh0t0FrqSXB15jt4eH7arZ7LePL2s7tfE8kaNJDTGaO1r46WuKmUFF7qWUoWqtlq6EJrgFG06po11odalbY0PgnspJA9SzNHif9fmCJB9aFPuv7s8tYy2f5-0rD1-In4BZ5xU2w</recordid><startdate>20050815</startdate><enddate>20050815</enddate><creator>Li, Y. J.</creator><creator>Heo, Y. W.</creator><creator>Kwon, Y.</creator><creator>Ip, K.</creator><creator>Pearton, S. J.</creator><creator>Norton, D. P.</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20050815</creationdate><title>Transport properties of p-type phosphorus-doped (Zn,Mg)O grown by pulsed-laser deposition</title><author>Li, Y. J. ; Heo, Y. W. ; Kwon, Y. ; Ip, K. ; Pearton, S. J. ; Norton, D. P.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c295t-f9bb66e8be46775c32368445f78c64dff9fd509a16bcdf86bb6cbef32e4342f43</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2005</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Li, Y. J.</creatorcontrib><creatorcontrib>Heo, Y. W.</creatorcontrib><creatorcontrib>Kwon, Y.</creatorcontrib><creatorcontrib>Ip, K.</creatorcontrib><creatorcontrib>Pearton, S. J.</creatorcontrib><creatorcontrib>Norton, D. P.</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Li, Y. J.</au><au>Heo, Y. W.</au><au>Kwon, Y.</au><au>Ip, K.</au><au>Pearton, S. J.</au><au>Norton, D. P.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Transport properties of p-type phosphorus-doped (Zn,Mg)O grown by pulsed-laser deposition</atitle><jtitle>Applied physics letters</jtitle><date>2005-08-15</date><risdate>2005</risdate><volume>87</volume><issue>7</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>We report on carrier type in phosphorus-doped (Zn,Mg)O films grown by pulsed-laser deposition under a broad range of conditions. For film growth at 500°C, increasing the oxygen partial pressure from 20to200mTorr yielded a carrier type conversion from n to p type. Transport characteristics of as-grown P-doped (Zn,Mg)O films were determined by Hall-effect measurements at room temperature. The P-doped (Zn,Mg)O films grown at 150mTorr oxygen partial pressure were marginally p type and exhibited a hole concentration of 2.7×1016cm−3, a mobility of 8.2cm2∕Vs, and a resistivity of 35Ωcm. The films exhibited good crystallinity with c-axis orientation. These results indicate the importance of oxidation conditions in realizing p-type (Zn,Mg)O films.</abstract><doi>10.1063/1.2010600</doi></addata></record> |
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| title | Transport properties of p-type phosphorus-doped (Zn,Mg)O grown by pulsed-laser deposition |
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