A comprehensive review of ZnO materials and devices
The semiconductor ZnO has gained substantial interest in the research community in part because of its large exciton binding energy ( 60 meV ) which could lead to lasing action based on exciton recombination even above room temperature. Even though research focusing on ZnO goes back many decades, th...
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Veröffentlicht in: | Journal of applied physics 2005-08, Vol.98 (4), p.041301-041301-103 |
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Hauptverfasser: | , , , , , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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