Room-temperature epitaxial growth of ferromagnetic Fe3Si films on Si(111) by facing target direct-current sputtering

Room-temperature epitaxial growth of ferromagnetic Fe3Si films on Si(111) by facing target direct-current sputtering

Ferromagnetic Fe3Si thin films with an extremely smooth surface morphology can be epitaxially grown on Si(111) at room temperature by facing target direct-current sputtering. The epitaxial relationship is Fe3Si(111)‖Si(111) with Fe3Si[11¯0]‖Si[1¯10]. By the application of the extinction rule of x-ra...

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Veröffentlicht in:Applied physics letters 2005-06, Vol.86 (26)
Hauptverfasser: Yoshitake, T., Nakagauchi, D., Ogawa, T., Itakura, M., Kuwano, N., Tomokiyo, Y., Kajiwara, T., Nagayama, K.
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container_issue 26
container_start_page
container_title Applied physics letters
container_volume 86
creator Yoshitake, T.
Nakagauchi, D.
Ogawa, T.
Itakura, M.
Kuwano, N.
Tomokiyo, Y.
Kajiwara, T.
Nagayama, K.
description Ferromagnetic Fe3Si thin films with an extremely smooth surface morphology can be epitaxially grown on Si(111) at room temperature by facing target direct-current sputtering. The epitaxial relationship is Fe3Si(111)‖Si(111) with Fe3Si[11¯0]‖Si[1¯10]. By the application of the extinction rule of x-ray diffraction, the generated Fe3Si was confirmed to possess a B2 structure and not a DO3 one. The film showed a saturation magnetization value of 960emu∕cm3, which was slightly lower than that of bulk DO3-Fe3Si. It was observed that the magnetization easy axis was along the [11¯0] direction in the film plane.
doi_str_mv 10.1063/1.1978984
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fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_1978984</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1063_1_1978984</sourcerecordid><originalsourceid>FETCH-LOGICAL-c225t-fb664c4cc63c155670bc1b6705f20cc58418483f4264f47aa818c063b535d8233</originalsourceid><addsrcrecordid>eNotkM1KAzEYRYMoWKsL3yBLu0jNN_mZdCnFqlAQrK6HzNdkjHR-SDJo394RuzpcuFy4h5Bb4EvgWtzDElalWRl5RmbAy5IJAHNOZpxzwfRKwSW5SulriqoQYkbyW9-3LLt2cNHmMTrqhpDtT7AH2sT-O3_S3lPvYuxb23QuB6QbJ3aB-nBoE-07ugt3ALCg9ZF6i6FraLaxcZnuQ3SYGY4xui7TNIw5uzgVrsmFt4fkbk6ck4_N4_v6mW1fn17WD1uGRaEy87XWEiWiFghK6ZLXCPUE5QuOqIwEI43wstDSy9JaAwYnCbUSam-me3Oy-N_F2KcUna-GGFobjxXw6k9XBdVJl_gFkyNc2g</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Room-temperature epitaxial growth of ferromagnetic Fe3Si films on Si(111) by facing target direct-current sputtering</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><creator>Yoshitake, T. ; Nakagauchi, D. ; Ogawa, T. ; Itakura, M. ; Kuwano, N. ; Tomokiyo, Y. ; Kajiwara, T. ; Nagayama, K.</creator><creatorcontrib>Yoshitake, T. ; Nakagauchi, D. ; Ogawa, T. ; Itakura, M. ; Kuwano, N. ; Tomokiyo, Y. ; Kajiwara, T. ; Nagayama, K.</creatorcontrib><description>Ferromagnetic Fe3Si thin films with an extremely smooth surface morphology can be epitaxially grown on Si(111) at room temperature by facing target direct-current sputtering. The epitaxial relationship is Fe3Si(111)‖Si(111) with Fe3Si[11¯0]‖Si[1¯10]. By the application of the extinction rule of x-ray diffraction, the generated Fe3Si was confirmed to possess a B2 structure and not a DO3 one. The film showed a saturation magnetization value of 960emu∕cm3, which was slightly lower than that of bulk DO3-Fe3Si. It was observed that the magnetization easy axis was along the [11¯0] direction in the film plane.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.1978984</identifier><language>eng</language><ispartof>Applied physics letters, 2005-06, Vol.86 (26)</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c225t-fb664c4cc63c155670bc1b6705f20cc58418483f4264f47aa818c063b535d8233</citedby><cites>FETCH-LOGICAL-c225t-fb664c4cc63c155670bc1b6705f20cc58418483f4264f47aa818c063b535d8233</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Yoshitake, T.</creatorcontrib><creatorcontrib>Nakagauchi, D.</creatorcontrib><creatorcontrib>Ogawa, T.</creatorcontrib><creatorcontrib>Itakura, M.</creatorcontrib><creatorcontrib>Kuwano, N.</creatorcontrib><creatorcontrib>Tomokiyo, Y.</creatorcontrib><creatorcontrib>Kajiwara, T.</creatorcontrib><creatorcontrib>Nagayama, K.</creatorcontrib><title>Room-temperature epitaxial growth of ferromagnetic Fe3Si films on Si(111) by facing target direct-current sputtering</title><title>Applied physics letters</title><description>Ferromagnetic Fe3Si thin films with an extremely smooth surface morphology can be epitaxially grown on Si(111) at room temperature by facing target direct-current sputtering. The epitaxial relationship is Fe3Si(111)‖Si(111) with Fe3Si[11¯0]‖Si[1¯10]. By the application of the extinction rule of x-ray diffraction, the generated Fe3Si was confirmed to possess a B2 structure and not a DO3 one. The film showed a saturation magnetization value of 960emu∕cm3, which was slightly lower than that of bulk DO3-Fe3Si. It was observed that the magnetization easy axis was along the [11¯0] direction in the film plane.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><recordid>eNotkM1KAzEYRYMoWKsL3yBLu0jNN_mZdCnFqlAQrK6HzNdkjHR-SDJo394RuzpcuFy4h5Bb4EvgWtzDElalWRl5RmbAy5IJAHNOZpxzwfRKwSW5SulriqoQYkbyW9-3LLt2cNHmMTrqhpDtT7AH2sT-O3_S3lPvYuxb23QuB6QbJ3aB-nBoE-07ugt3ALCg9ZF6i6FraLaxcZnuQ3SYGY4xui7TNIw5uzgVrsmFt4fkbk6ck4_N4_v6mW1fn17WD1uGRaEy87XWEiWiFghK6ZLXCPUE5QuOqIwEI43wstDSy9JaAwYnCbUSam-me3Oy-N_F2KcUna-GGFobjxXw6k9XBdVJl_gFkyNc2g</recordid><startdate>20050627</startdate><enddate>20050627</enddate><creator>Yoshitake, T.</creator><creator>Nakagauchi, D.</creator><creator>Ogawa, T.</creator><creator>Itakura, M.</creator><creator>Kuwano, N.</creator><creator>Tomokiyo, Y.</creator><creator>Kajiwara, T.</creator><creator>Nagayama, K.</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20050627</creationdate><title>Room-temperature epitaxial growth of ferromagnetic Fe3Si films on Si(111) by facing target direct-current sputtering</title><author>Yoshitake, T. ; Nakagauchi, D. ; Ogawa, T. ; Itakura, M. ; Kuwano, N. ; Tomokiyo, Y. ; Kajiwara, T. ; Nagayama, K.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c225t-fb664c4cc63c155670bc1b6705f20cc58418483f4264f47aa818c063b535d8233</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2005</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yoshitake, T.</creatorcontrib><creatorcontrib>Nakagauchi, D.</creatorcontrib><creatorcontrib>Ogawa, T.</creatorcontrib><creatorcontrib>Itakura, M.</creatorcontrib><creatorcontrib>Kuwano, N.</creatorcontrib><creatorcontrib>Tomokiyo, Y.</creatorcontrib><creatorcontrib>Kajiwara, T.</creatorcontrib><creatorcontrib>Nagayama, K.</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Yoshitake, T.</au><au>Nakagauchi, D.</au><au>Ogawa, T.</au><au>Itakura, M.</au><au>Kuwano, N.</au><au>Tomokiyo, Y.</au><au>Kajiwara, T.</au><au>Nagayama, K.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Room-temperature epitaxial growth of ferromagnetic Fe3Si films on Si(111) by facing target direct-current sputtering</atitle><jtitle>Applied physics letters</jtitle><date>2005-06-27</date><risdate>2005</risdate><volume>86</volume><issue>26</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>Ferromagnetic Fe3Si thin films with an extremely smooth surface morphology can be epitaxially grown on Si(111) at room temperature by facing target direct-current sputtering. The epitaxial relationship is Fe3Si(111)‖Si(111) with Fe3Si[11¯0]‖Si[1¯10]. By the application of the extinction rule of x-ray diffraction, the generated Fe3Si was confirmed to possess a B2 structure and not a DO3 one. The film showed a saturation magnetization value of 960emu∕cm3, which was slightly lower than that of bulk DO3-Fe3Si. It was observed that the magnetization easy axis was along the [11¯0] direction in the film plane.</abstract><doi>10.1063/1.1978984</doi></addata></record>
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title Room-temperature epitaxial growth of ferromagnetic Fe3Si films on Si(111) by facing target direct-current sputtering
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-02T20%3A23%3A32IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Room-temperature%20epitaxial%20growth%20of%20ferromagnetic%20Fe3Si%20films%20on%20Si(111)%20by%20facing%20target%20direct-current%20sputtering&rft.jtitle=Applied%20physics%20letters&rft.au=Yoshitake,%20T.&rft.date=2005-06-27&rft.volume=86&rft.issue=26&rft.issn=0003-6951&rft.eissn=1077-3118&rft_id=info:doi/10.1063/1.1978984&rft_dat=%3Ccrossref%3E10_1063_1_1978984%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true