Photographic surveying of minority carrier diffusion length in polycrystalline silicon solar cells by electroluminescence

Photographic surveying of the minority carrier diffusion length distribution in polycrystalline silicon solar cells was proposed. Light emission from the cell under the forward bias was captured by a charge coupled device camera. We have found that the intensity distribution of light emission clearl...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Applied physics letters 2005-06, Vol.86 (26), p.262108-262108-3
Hauptverfasser: Fuyuki, Takashi, Kondo, Hayato, Yamazaki, Tsutomu, Takahashi, Yu, Uraoka, Yukiharu
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 262108-3
container_issue 26
container_start_page 262108
container_title Applied physics letters
container_volume 86
creator Fuyuki, Takashi
Kondo, Hayato
Yamazaki, Tsutomu
Takahashi, Yu
Uraoka, Yukiharu
description Photographic surveying of the minority carrier diffusion length distribution in polycrystalline silicon solar cells was proposed. Light emission from the cell under the forward bias was captured by a charge coupled device camera. We have found that the intensity distribution of light emission clearly agreed with the mapping of minority carrier diffusion length in polycrystalline silicon active layers. The emission intensity had a one-to-one relationship with the minority carrier diffusion length, which yielded a semiquantitative analysis method of the diffusion length mapping and the detection of the deteriorated areas.
doi_str_mv 10.1063/1.1978979
format Article
fullrecord <record><control><sourceid>scitation_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_1978979</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>apl</sourcerecordid><originalsourceid>FETCH-LOGICAL-c350t-9ee26a422dbac58800c43b1a41c8f6e0b6216698d4c5e398792f3d7d9fad7c963</originalsourceid><addsrcrecordid>eNp1kEFLwzAYhoMoOKcH_0GuHjqTpk2biyBDpzDQg55L-vXLFsmakWRC_r2V7eDF08sLDy-8DyG3nC04k-KeL7hqWtWoMzLjrGkKwXl7TmaMMVFIVfNLchXj11TrUogZye9bn_wm6P3WAo2H8I3ZjhvqDd3Z0QebMgUdgsVAB2vMIVo_UofjJm2pHeneuwwhx6SdsyPSaJ2FiYje6UABnYu0zxQdQgreHaZRjIAj4DW5MNpFvDnlnHw-P30sX4r12-p1-bguQNQsFQqxlLoqy6HXULctY1CJnuuKQ2sksl6WXErVDhXUKFTbqNKIoRmU0UMDSoo5uTvuQvAxBjTdPtidDrnjrPt11vHu5GxiH45sBJt0mq7-D_8V153EiR_DNXhk</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Photographic surveying of minority carrier diffusion length in polycrystalline silicon solar cells by electroluminescence</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><creator>Fuyuki, Takashi ; Kondo, Hayato ; Yamazaki, Tsutomu ; Takahashi, Yu ; Uraoka, Yukiharu</creator><creatorcontrib>Fuyuki, Takashi ; Kondo, Hayato ; Yamazaki, Tsutomu ; Takahashi, Yu ; Uraoka, Yukiharu</creatorcontrib><description>Photographic surveying of the minority carrier diffusion length distribution in polycrystalline silicon solar cells was proposed. Light emission from the cell under the forward bias was captured by a charge coupled device camera. We have found that the intensity distribution of light emission clearly agreed with the mapping of minority carrier diffusion length in polycrystalline silicon active layers. The emission intensity had a one-to-one relationship with the minority carrier diffusion length, which yielded a semiquantitative analysis method of the diffusion length mapping and the detection of the deteriorated areas.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.1978979</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>American Institute of Physics</publisher><ispartof>Applied physics letters, 2005-06, Vol.86 (26), p.262108-262108-3</ispartof><rights>2005 American Institute of Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c350t-9ee26a422dbac58800c43b1a41c8f6e0b6216698d4c5e398792f3d7d9fad7c963</citedby><cites>FETCH-LOGICAL-c350t-9ee26a422dbac58800c43b1a41c8f6e0b6216698d4c5e398792f3d7d9fad7c963</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.1978979$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,776,780,790,1553,4498,27901,27902,76127,76133</link.rule.ids></links><search><creatorcontrib>Fuyuki, Takashi</creatorcontrib><creatorcontrib>Kondo, Hayato</creatorcontrib><creatorcontrib>Yamazaki, Tsutomu</creatorcontrib><creatorcontrib>Takahashi, Yu</creatorcontrib><creatorcontrib>Uraoka, Yukiharu</creatorcontrib><title>Photographic surveying of minority carrier diffusion length in polycrystalline silicon solar cells by electroluminescence</title><title>Applied physics letters</title><description>Photographic surveying of the minority carrier diffusion length distribution in polycrystalline silicon solar cells was proposed. Light emission from the cell under the forward bias was captured by a charge coupled device camera. We have found that the intensity distribution of light emission clearly agreed with the mapping of minority carrier diffusion length in polycrystalline silicon active layers. The emission intensity had a one-to-one relationship with the minority carrier diffusion length, which yielded a semiquantitative analysis method of the diffusion length mapping and the detection of the deteriorated areas.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><recordid>eNp1kEFLwzAYhoMoOKcH_0GuHjqTpk2biyBDpzDQg55L-vXLFsmakWRC_r2V7eDF08sLDy-8DyG3nC04k-KeL7hqWtWoMzLjrGkKwXl7TmaMMVFIVfNLchXj11TrUogZye9bn_wm6P3WAo2H8I3ZjhvqDd3Z0QebMgUdgsVAB2vMIVo_UofjJm2pHeneuwwhx6SdsyPSaJ2FiYje6UABnYu0zxQdQgreHaZRjIAj4DW5MNpFvDnlnHw-P30sX4r12-p1-bguQNQsFQqxlLoqy6HXULctY1CJnuuKQ2sksl6WXErVDhXUKFTbqNKIoRmU0UMDSoo5uTvuQvAxBjTdPtidDrnjrPt11vHu5GxiH45sBJt0mq7-D_8V153EiR_DNXhk</recordid><startdate>20050627</startdate><enddate>20050627</enddate><creator>Fuyuki, Takashi</creator><creator>Kondo, Hayato</creator><creator>Yamazaki, Tsutomu</creator><creator>Takahashi, Yu</creator><creator>Uraoka, Yukiharu</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20050627</creationdate><title>Photographic surveying of minority carrier diffusion length in polycrystalline silicon solar cells by electroluminescence</title><author>Fuyuki, Takashi ; Kondo, Hayato ; Yamazaki, Tsutomu ; Takahashi, Yu ; Uraoka, Yukiharu</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c350t-9ee26a422dbac58800c43b1a41c8f6e0b6216698d4c5e398792f3d7d9fad7c963</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2005</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Fuyuki, Takashi</creatorcontrib><creatorcontrib>Kondo, Hayato</creatorcontrib><creatorcontrib>Yamazaki, Tsutomu</creatorcontrib><creatorcontrib>Takahashi, Yu</creatorcontrib><creatorcontrib>Uraoka, Yukiharu</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Fuyuki, Takashi</au><au>Kondo, Hayato</au><au>Yamazaki, Tsutomu</au><au>Takahashi, Yu</au><au>Uraoka, Yukiharu</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Photographic surveying of minority carrier diffusion length in polycrystalline silicon solar cells by electroluminescence</atitle><jtitle>Applied physics letters</jtitle><date>2005-06-27</date><risdate>2005</risdate><volume>86</volume><issue>26</issue><spage>262108</spage><epage>262108-3</epage><pages>262108-262108-3</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>Photographic surveying of the minority carrier diffusion length distribution in polycrystalline silicon solar cells was proposed. Light emission from the cell under the forward bias was captured by a charge coupled device camera. We have found that the intensity distribution of light emission clearly agreed with the mapping of minority carrier diffusion length in polycrystalline silicon active layers. The emission intensity had a one-to-one relationship with the minority carrier diffusion length, which yielded a semiquantitative analysis method of the diffusion length mapping and the detection of the deteriorated areas.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.1978979</doi></addata></record>
fulltext fulltext
identifier ISSN: 0003-6951
ispartof Applied physics letters, 2005-06, Vol.86 (26), p.262108-262108-3
issn 0003-6951
1077-3118
language eng
recordid cdi_crossref_primary_10_1063_1_1978979
source AIP Journals Complete; AIP Digital Archive
title Photographic surveying of minority carrier diffusion length in polycrystalline silicon solar cells by electroluminescence
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-03T06%3A34%3A00IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-scitation_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Photographic%20surveying%20of%20minority%20carrier%20diffusion%20length%20in%20polycrystalline%20silicon%20solar%20cells%20by%20electroluminescence&rft.jtitle=Applied%20physics%20letters&rft.au=Fuyuki,%20Takashi&rft.date=2005-06-27&rft.volume=86&rft.issue=26&rft.spage=262108&rft.epage=262108-3&rft.pages=262108-262108-3&rft.issn=0003-6951&rft.eissn=1077-3118&rft.coden=APPLAB&rft_id=info:doi/10.1063/1.1978979&rft_dat=%3Cscitation_cross%3Eapl%3C/scitation_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true