Deposition of microcrystalline silicon prepared by hot-wire chemical-vapor deposition: The influence of the deposition parameters on the material properties and solar cell performance
Microcrystalline silicon ( μ c -Si:H) of superior quality can be prepared using the hot-wire chemical-vapor deposition method (HWCVD). At a low substrate temperature ( T S ) of 185°C excellent material properties and solar cell performance were obtained with spin densities of 6 × 10 15 cm − 3 and so...
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| Veröffentlicht in: | Journal of applied physics 2005-07, Vol.98 (2), p.024905-024905-18 |
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| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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