Template-directed carbon nanotube network using self-organized Si nanocrystals

We demonstrate a way to direct carbon nanotube growth using Si nanocrystals that are self-ordered via the thermal decomposition of thin silicon-on-insulator substrates. The Si nanocrystals are about 90 nm wide and 100 - 150 nm tall, with 200 nm spacing. Nanotubes connect the silicon nanocrystals to...

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Veröffentlicht in:Applied physics letters 2005-06, Vol.86 (26), p.263107-263107-3
Hauptverfasser: Yang, B., Marcus, M. S., Keppel, D. G., Zhang, P. P., Li, Z. W., Larson, B. J., Savage, D. E., Simmons, J. M., Castellini, O. M., Eriksson, M. A., Lagally, M. G.
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container_end_page 263107-3
container_issue 26
container_start_page 263107
container_title Applied physics letters
container_volume 86
creator Yang, B.
Marcus, M. S.
Keppel, D. G.
Zhang, P. P.
Li, Z. W.
Larson, B. J.
Savage, D. E.
Simmons, J. M.
Castellini, O. M.
Eriksson, M. A.
Lagally, M. G.
description We demonstrate a way to direct carbon nanotube growth using Si nanocrystals that are self-ordered via the thermal decomposition of thin silicon-on-insulator substrates. The Si nanocrystals are about 90 nm wide and 100 - 150 nm tall, with 200 nm spacing. Nanotubes connect the silicon nanocrystals to form a network. Nanotubes selectively appear between tops of the Si nanocrystals. We show that the flow pattern of the carbon feedstock in the chemical vapor deposition growth process is disturbed by the geometric effect of the Si nanocrystals, providing a mechanism for growth between the tops of the Si nanocrystals.
doi_str_mv 10.1063/1.1952585
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title Template-directed carbon nanotube network using self-organized Si nanocrystals
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