Physical and electrical properties of lanthanide-incorporated tantalum nitride for n -channel metal-oxide-semiconductor field-effect transistors

Lanthanide-incorporated tantalum nitride (TaN) is studied as a potential metal gate candidate for n -channel metal-oxide-semiconductor field-effect transistors ( n -MOSFETs). Lanthanides such as terbium (Tb), erbium (Er), and ytterbium (Yb) are introduced into TaN to form Ta 1 − x Tb x N y , Ta 1 −...

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Veröffentlicht in:	Applied physics letters 2005-08, Vol.87 (7), p.073506-073506-3
Hauptverfasser:	Ren, C., Chan, D. S. H., Wang, X. P., Faizhal, B. B., Li, M.-F., Yeo, Y.-C., Trigg, A. D., Agarwal, A., Balasubramanian, N., Pan, J. S., Lim, P. C., Huan, A. C. H., Kwong, D.-L.
Format:	Artikel
Sprache:	eng
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