Effects of thin GaAs insertion layer on InAs∕(InGaAs)∕InP(001) quantum dots grown by metalorganic chemical vapor deposition

We studied the influence of a thin GaAs insertion layer (5–10 monolayers) on the optical properties of InAs QDs grown by metalorganic chemical vapor deposition. The insertion of a 10 monolayer (ML) thick GaAs layer on the InAs QDs led to significant photoluminescence blueshifts of 54 and 111meV when...

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Veröffentlicht in:	Applied physics letters 2005-05, Vol.86 (22)
Hauptverfasser:	Park, Kwangmin, Moon, Pilkyung, Ahn, Eungjin, Hong, Sukwon, Yoon, Euijoon, Yoon, Jeong Won, Cheong, Hyeonsik, Leburton, Jean-Pierre
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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