Radiative centers in GaS doped with Zn and Cd
Photoluminescence (PL) measurement has been made on Zn- and Cd-doped p - Ga S . The 1.85 and 1.95 eV emission bands are observed in the PL spectra of Zn- and Cd-doped samples at 77 K , respectively. The shapes of PL spectrum and temperature dependences of full width at half maximum of the 1.85 and 1...
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| Veröffentlicht in: | Review of scientific instruments 2005-06, Vol.76 (6), p.066108-066108-2 |
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| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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| Zusammenfassung: | Photoluminescence (PL) measurement has been made on Zn- and Cd-doped
p
-
Ga
S
. The 1.85 and
1.95
eV
emission bands are observed in the PL spectra of Zn- and Cd-doped samples at
77
K
, respectively. The shapes of PL spectrum and temperature dependences of full width at half maximum of the 1.85 and
1.95
eV
emission bands are characterized by the recombination mechanism of the configurational coordinate model. It is found that these emission bands are related to the complex centers of vacancy and acceptors due to Zn or Cd atoms. |
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| ISSN: | 0034-6748 1089-7623 |
| DOI: | 10.1063/1.1932307 |