Near-field optical photolithography for high-aspect-ratio patterning using bilayer resist

Near-field optical photolithography for high-aspect-ratio patterning using bilayer resist

We attempted to achieve a sufficiently large high-aspect-ratio patterning in near-field optical photolithography employing a bilayer resist process. In this experiment, we formed a resist pattern with a linewidth of 130 nm and a depth of 550 nm . This suggests that a practical method of near-field o...

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Veröffentlicht in:Applied physics letters 2005-05, Vol.86 (20), p.201113-201113-3
Hauptverfasser: Naya, M., Tsuruma, I., Tani, T., Mukai, A., Sakaguchi, S., Yasunami, S.
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container_end_page 201113-3
container_issue 20
container_start_page 201113
container_title Applied physics letters
container_volume 86
creator Naya, M.
Tsuruma, I.
Tani, T.
Mukai, A.
Sakaguchi, S.
Yasunami, S.
description We attempted to achieve a sufficiently large high-aspect-ratio patterning in near-field optical photolithography employing a bilayer resist process. In this experiment, we formed a resist pattern with a linewidth of 130 nm and a depth of 550 nm . This suggests that a practical method of near-field optical photolithography should become available. We also studied the dependency of an optical pattern on resist film thickness by the three-dimentional finite-difference time-domain method. The calculation results suggest that the resist film thickness affects the distribution of light in the resist.
doi_str_mv 10.1063/1.1931056
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title Near-field optical photolithography for high-aspect-ratio patterning using bilayer resist
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