Electronic structure of a polymer nanowire on H-terminated Si(100)

Electronic structure of a polymer nanowire on H-terminated Si(100)

We measured current-voltage ( I - V ) characteristics of individual conducting polymers, poly(3-hexylthiophene)s (P3HTs), fixed on hydrogen-terminated Si(100) using scanning tunneling microscopy (STM)∕spectroscopy. The I - V curves reveal rectification characteristics that are attributed to the shif...

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Veröffentlicht in:Journal of applied physics 2005-06, Vol.97 (12), p.124302-124302-6
Hauptverfasser: Terada, Yasuhiko, Miki, Kazushi, Fujimori, Masaaki, Heike, Seiji, Suwa, Yuji, Hashizume, Tomihiro
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container_end_page 124302-6
container_issue 12
container_start_page 124302
container_title Journal of applied physics
container_volume 97
creator Terada, Yasuhiko
Miki, Kazushi
Fujimori, Masaaki
Heike, Seiji
Suwa, Yuji
Hashizume, Tomihiro
description We measured current-voltage ( I - V ) characteristics of individual conducting polymers, poly(3-hexylthiophene)s (P3HTs), fixed on hydrogen-terminated Si(100) using scanning tunneling microscopy (STM)∕spectroscopy. The I - V curves reveal rectification characteristics that are attributed to the shift of the energy level of the valence-band maximum of P3HT under bias. The current suppression at positive substrate bias results from the effect of differential charging of the polymer between the opposite bias polarities, indicating the possibility for doping of polymer nanowires by using a STM tip as a gate electrode.
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title Electronic structure of a polymer nanowire on H-terminated Si(100)
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