Stress development kinetics in plasma-enhanced chemical-vapor-deposited silicon nitride films

The kinetics of post-deposition irreversible tensile stress development on annealing in plasma-enhanced chemical-vapor-deposited silicon nitride films are described. Films were deposited at 150, 250, and 300°C, and in situ stress measurements were performed during thermal cycling and annealing at va...

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Veröffentlicht in:	Journal of applied physics 2005-06, Vol.97 (11), p.114914-114914-10
Hauptverfasser:	Hughey, Michael P., Cook, Robert F.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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