Detection of halide ions with AlGaN∕GaN high electron mobility transistors

Al Ga N ∕ Ga N high electron mobility transistors (HEMTs) both with and without a Au gate are found to exhibit significant changes in channel conductance upon exposing the gate region to various halide ions. The polar nature of the halide ions leads to a change of surface charge in the gate region o...

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Veröffentlicht in:Applied physics letters 2005-04, Vol.86 (17)
Hauptverfasser: Kang, B. S., Ren, F., Kang, M. C., Lofton, C., Tan, Weihong, Pearton, S. J., Dabiran, A., Osinsky, A., Chow, P. P.
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container_issue 17
container_start_page
container_title Applied physics letters
container_volume 86
creator Kang, B. S.
Ren, F.
Kang, M. C.
Lofton, C.
Tan, Weihong
Pearton, S. J.
Dabiran, A.
Osinsky, A.
Chow, P. P.
description Al Ga N ∕ Ga N high electron mobility transistors (HEMTs) both with and without a Au gate are found to exhibit significant changes in channel conductance upon exposing the gate region to various halide ions. The polar nature of the halide ions leads to a change of surface charge in the gate region on the HEMT, producing a change in the surface potential at the semiconductor∕liquid interface. HEMTs with a Au-gate electrode not only doubled the sensitivity of changing the channel conductance as compared to gateless HEMT, but also showed the opposite conductance behavior. When anions adsorbed on the Au, they produced a counter charge for electrovalence. These anions drag some counter ions from the bulk solution or create an image positive charge on the metal for the required neutrality. The gateless HEMTs can be used as sensors for a range of chemicals through appropriate modification with covalently bonded halide functional groups on the Au surface. This creates many possibilities to functionalize the surface for a wide range of integrated biological, chemical, and fluid monitoring sensors.
doi_str_mv 10.1063/1.1920433
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title Detection of halide ions with AlGaN∕GaN high electron mobility transistors
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