Growth of single quantum dots on preprocessed structures: Single photon emitters on a tip

Growth of single quantum dots on preprocessed structures: Single photon emitters on a tip

We have grown InP quantum dots in GaInP by gas-source molecular-beam epitaxy on sharp tips etched out of a GaAs substrate. The growth parameters were optimized to produce single quantum dots on the tips, predominantly at the edges. Intensity correlation measurements of the fluorescence from single d...

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Veröffentlicht in:Applied physics letters 2005-02, Vol.86 (9), p.091911-091911-3
Hauptverfasser: Zwiller, V., Aichele, T., Hatami, F., Masselink, W. T., Benson, O.
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container_end_page 091911-3
container_issue 9
container_start_page 091911
container_title Applied physics letters
container_volume 86
creator Zwiller, V.
Aichele, T.
Hatami, F.
Masselink, W. T.
Benson, O.
description We have grown InP quantum dots in GaInP by gas-source molecular-beam epitaxy on sharp tips etched out of a GaAs substrate. The growth parameters were optimized to produce single quantum dots on the tips, predominantly at the edges. Intensity correlation measurements of the fluorescence from single dots on these tips reveal antibunched photon emision. We propose to use these tip structures with stable single photon emitters at their apex as active probes for further controlled experiments in quantum and nano-optics.
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title Growth of single quantum dots on preprocessed structures: Single photon emitters on a tip
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