Low-temperature diffusion of high-concentration phosphorus in silicon, a preferential movement toward the surface
We demonstrate that ultrashallow high-concentration phosphorus profiles in silicon diffuse preferentially toward the surface during low-temperature annealing at 700 ° C after recrystallization of an amorphous layer. In this work, we observe the preferential diffusion following a preamorphizing germa...
Gespeichert in:
| Veröffentlicht in: | Applied physics letters 2005-02, Vol.86 (8), p.081917-081917-3 |
|---|---|
| Hauptverfasser: | , , , , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 081917-3 |
|---|---|
| container_issue | 8 |
| container_start_page | 081917 |
| container_title | Applied physics letters |
| container_volume | 86 |
| creator | Duffy, R. Venezia, V. C. Loo, J. Hopstaken, M. J. P. Verheijen, M. A. van Berkum, J. G. M. Maas, G. C. J. Tamminga, Y. Dao, T. Demeurisse, C. |
| description | We demonstrate that ultrashallow high-concentration phosphorus profiles in silicon diffuse preferentially toward the surface during low-temperature annealing at
700
°
C
after recrystallization of an amorphous layer. In this work, we observe the preferential diffusion following a preamorphizing germanium implant, and also after a self-amorphizing phosphorus implant. This phenomenon is driven by the presence and dissolution of silicon interstitial defects. The greater the distance between the defect band and the high-concentration phosphorus profile, the less the preferential diffusion for a fixed anneal time. The overall result of this effect is a phosphorus profile that is significantly shallower and steeper than after implant. |
| doi_str_mv | 10.1063/1.1869540 |
| format | Article |
| fullrecord | <record><control><sourceid>scitation_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_1869540</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>apl</sourcerecordid><originalsourceid>FETCH-LOGICAL-c284t-f991f5774e046c5bc2f812dd0d09c0622820be1862cca5494ab56973409e5ccf3</originalsourceid><addsrcrecordid>eNp1kMtKAzEUhoMoWKsL3yBbwdRcZyYbQYo3KLjRdUgziRPpTMYkY_HtTW0XblwczuX_OZzzAXBJ8ILgit2QBWkqKTg-AjOC6xoxQppjMMMYM1QEcgrOUvooraCMzcDnKmxRtv1oo85TtLD1zk3JhwEGBzv_3iETBmOHXPTddOxCKhGnBP0Ak9_4ol9DDcdonY3F6PUG9uHL9qWGOWx1bGHuLExTdNrYc3Di9CbZi0Oeg7eH-9flE1q9PD4v71bI0IZn5KQkTtQ1t5hXRqwNdQ2hbYtbLA2uKG0oXtvyLDVGCy65XotK1oxjaYUxjs3B1X6viSGlcpwao-91_FYEqx0rRdSBVfHe7r3J-Pz75__mAkz9AaZ2wNgPQm5zuQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Low-temperature diffusion of high-concentration phosphorus in silicon, a preferential movement toward the surface</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><creator>Duffy, R. ; Venezia, V. C. ; Loo, J. ; Hopstaken, M. J. P. ; Verheijen, M. A. ; van Berkum, J. G. M. ; Maas, G. C. J. ; Tamminga, Y. ; Dao, T. ; Demeurisse, C.</creator><creatorcontrib>Duffy, R. ; Venezia, V. C. ; Loo, J. ; Hopstaken, M. J. P. ; Verheijen, M. A. ; van Berkum, J. G. M. ; Maas, G. C. J. ; Tamminga, Y. ; Dao, T. ; Demeurisse, C.</creatorcontrib><description>We demonstrate that ultrashallow high-concentration phosphorus profiles in silicon diffuse preferentially toward the surface during low-temperature annealing at
700
°
C
after recrystallization of an amorphous layer. In this work, we observe the preferential diffusion following a preamorphizing germanium implant, and also after a self-amorphizing phosphorus implant. This phenomenon is driven by the presence and dissolution of silicon interstitial defects. The greater the distance between the defect band and the high-concentration phosphorus profile, the less the preferential diffusion for a fixed anneal time. The overall result of this effect is a phosphorus profile that is significantly shallower and steeper than after implant.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.1869540</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>American Institute of Physics</publisher><ispartof>Applied physics letters, 2005-02, Vol.86 (8), p.081917-081917-3</ispartof><rights>2005 American Institute of Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c284t-f991f5774e046c5bc2f812dd0d09c0622820be1862cca5494ab56973409e5ccf3</citedby><cites>FETCH-LOGICAL-c284t-f991f5774e046c5bc2f812dd0d09c0622820be1862cca5494ab56973409e5ccf3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.1869540$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>315,781,785,795,1560,4513,27929,27930,76389,76395</link.rule.ids></links><search><creatorcontrib>Duffy, R.</creatorcontrib><creatorcontrib>Venezia, V. C.</creatorcontrib><creatorcontrib>Loo, J.</creatorcontrib><creatorcontrib>Hopstaken, M. J. P.</creatorcontrib><creatorcontrib>Verheijen, M. A.</creatorcontrib><creatorcontrib>van Berkum, J. G. M.</creatorcontrib><creatorcontrib>Maas, G. C. J.</creatorcontrib><creatorcontrib>Tamminga, Y.</creatorcontrib><creatorcontrib>Dao, T.</creatorcontrib><creatorcontrib>Demeurisse, C.</creatorcontrib><title>Low-temperature diffusion of high-concentration phosphorus in silicon, a preferential movement toward the surface</title><title>Applied physics letters</title><description>We demonstrate that ultrashallow high-concentration phosphorus profiles in silicon diffuse preferentially toward the surface during low-temperature annealing at
700
°
C
after recrystallization of an amorphous layer. In this work, we observe the preferential diffusion following a preamorphizing germanium implant, and also after a self-amorphizing phosphorus implant. This phenomenon is driven by the presence and dissolution of silicon interstitial defects. The greater the distance between the defect band and the high-concentration phosphorus profile, the less the preferential diffusion for a fixed anneal time. The overall result of this effect is a phosphorus profile that is significantly shallower and steeper than after implant.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><recordid>eNp1kMtKAzEUhoMoWKsL3yBbwdRcZyYbQYo3KLjRdUgziRPpTMYkY_HtTW0XblwczuX_OZzzAXBJ8ILgit2QBWkqKTg-AjOC6xoxQppjMMMYM1QEcgrOUvooraCMzcDnKmxRtv1oo85TtLD1zk3JhwEGBzv_3iETBmOHXPTddOxCKhGnBP0Ak9_4ol9DDcdonY3F6PUG9uHL9qWGOWx1bGHuLExTdNrYc3Di9CbZi0Oeg7eH-9flE1q9PD4v71bI0IZn5KQkTtQ1t5hXRqwNdQ2hbYtbLA2uKG0oXtvyLDVGCy65XotK1oxjaYUxjs3B1X6viSGlcpwao-91_FYEqx0rRdSBVfHe7r3J-Pz75__mAkz9AaZ2wNgPQm5zuQ</recordid><startdate>20050221</startdate><enddate>20050221</enddate><creator>Duffy, R.</creator><creator>Venezia, V. C.</creator><creator>Loo, J.</creator><creator>Hopstaken, M. J. P.</creator><creator>Verheijen, M. A.</creator><creator>van Berkum, J. G. M.</creator><creator>Maas, G. C. J.</creator><creator>Tamminga, Y.</creator><creator>Dao, T.</creator><creator>Demeurisse, C.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20050221</creationdate><title>Low-temperature diffusion of high-concentration phosphorus in silicon, a preferential movement toward the surface</title><author>Duffy, R. ; Venezia, V. C. ; Loo, J. ; Hopstaken, M. J. P. ; Verheijen, M. A. ; van Berkum, J. G. M. ; Maas, G. C. J. ; Tamminga, Y. ; Dao, T. ; Demeurisse, C.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c284t-f991f5774e046c5bc2f812dd0d09c0622820be1862cca5494ab56973409e5ccf3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2005</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Duffy, R.</creatorcontrib><creatorcontrib>Venezia, V. C.</creatorcontrib><creatorcontrib>Loo, J.</creatorcontrib><creatorcontrib>Hopstaken, M. J. P.</creatorcontrib><creatorcontrib>Verheijen, M. A.</creatorcontrib><creatorcontrib>van Berkum, J. G. M.</creatorcontrib><creatorcontrib>Maas, G. C. J.</creatorcontrib><creatorcontrib>Tamminga, Y.</creatorcontrib><creatorcontrib>Dao, T.</creatorcontrib><creatorcontrib>Demeurisse, C.</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Duffy, R.</au><au>Venezia, V. C.</au><au>Loo, J.</au><au>Hopstaken, M. J. P.</au><au>Verheijen, M. A.</au><au>van Berkum, J. G. M.</au><au>Maas, G. C. J.</au><au>Tamminga, Y.</au><au>Dao, T.</au><au>Demeurisse, C.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Low-temperature diffusion of high-concentration phosphorus in silicon, a preferential movement toward the surface</atitle><jtitle>Applied physics letters</jtitle><date>2005-02-21</date><risdate>2005</risdate><volume>86</volume><issue>8</issue><spage>081917</spage><epage>081917-3</epage><pages>081917-081917-3</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>We demonstrate that ultrashallow high-concentration phosphorus profiles in silicon diffuse preferentially toward the surface during low-temperature annealing at
700
°
C
after recrystallization of an amorphous layer. In this work, we observe the preferential diffusion following a preamorphizing germanium implant, and also after a self-amorphizing phosphorus implant. This phenomenon is driven by the presence and dissolution of silicon interstitial defects. The greater the distance between the defect band and the high-concentration phosphorus profile, the less the preferential diffusion for a fixed anneal time. The overall result of this effect is a phosphorus profile that is significantly shallower and steeper than after implant.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.1869540</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 2005-02, Vol.86 (8), p.081917-081917-3 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_1869540 |
| source | AIP Journals Complete; AIP Digital Archive |
| title | Low-temperature diffusion of high-concentration phosphorus in silicon, a preferential movement toward the surface |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-12T07%3A52%3A01IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-scitation_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Low-temperature%20diffusion%20of%20high-concentration%20phosphorus%20in%20silicon,%20a%20preferential%20movement%20toward%20the%20surface&rft.jtitle=Applied%20physics%20letters&rft.au=Duffy,%20R.&rft.date=2005-02-21&rft.volume=86&rft.issue=8&rft.spage=081917&rft.epage=081917-3&rft.pages=081917-081917-3&rft.issn=0003-6951&rft.eissn=1077-3118&rft.coden=APPLAB&rft_id=info:doi/10.1063/1.1869540&rft_dat=%3Cscitation_cross%3Eapl%3C/scitation_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |