Controlled n -type doping of AlN:Si films grown on 6H-SiC(0001)by plasma-assisted molecular beam epitaxy

We study the properties of Si-doped AlN films grown on 6H-SiC(0001) by plasma-assisted molecular beam epitaxy. Whereas nominally undoped AlN films are invariably insulating in nature, Si-doped films are found to be semiconducting with an electron concentration up to 7.4 × 10 17 cm − 3 , and a resist...

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Veröffentlicht in:	Applied physics letters 2005-01, Vol.86 (2), p.024106-024106-3
Hauptverfasser:	Ive, Tommy, Brandt, Oliver, Kostial, Helmar, Friedland, Klaus J., Däweritz, Lutz, Ploog, Klaus H.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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