SSIOD: The next generation
Surface stress induced optical deflection (SSIOD) is a bending sample method for the in situ determination of the surface stress with a typical resolution of about 0.15 N ∕ m . Here we present the latest version of SSIOD with major improvements concerning the sample shape and clamping, the laser sys...
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| Veröffentlicht in: | Review of scientific instruments 2005-02, Vol.76 (2), p.023903-023903-7 |
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| container_end_page | 023903-7 |
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| container_title | Review of scientific instruments |
| container_volume | 76 |
| creator | Kury, P. Grabosch, T. Horn-von Hoegen, M. |
| description | Surface stress induced optical deflection (SSIOD) is a bending sample method for the
in situ
determination of the surface stress with a typical resolution of about
0.15
N
∕
m
. Here we present the latest version of SSIOD with major improvements concerning the sample shape and clamping, the laser system and the position detectors. With these modifications SSIOD becomes an easily applicable method to most UHV systems and can be combined with other surface analytical methods like SPA-LEED, Auger-CMA, XPS, UPS or maybe even with microscopy such as the flange-on LEEM. The presented modifications also improve the resolution of the method to below
0.01
N
∕
m
. |
| doi_str_mv | 10.1063/1.1844191 |
| format | Article |
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in situ
determination of the surface stress with a typical resolution of about
0.15
N
∕
m
. Here we present the latest version of SSIOD with major improvements concerning the sample shape and clamping, the laser system and the position detectors. With these modifications SSIOD becomes an easily applicable method to most UHV systems and can be combined with other surface analytical methods like SPA-LEED, Auger-CMA, XPS, UPS or maybe even with microscopy such as the flange-on LEEM. The presented modifications also improve the resolution of the method to below
0.01
N
∕
m
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in situ
determination of the surface stress with a typical resolution of about
0.15
N
∕
m
. Here we present the latest version of SSIOD with major improvements concerning the sample shape and clamping, the laser system and the position detectors. With these modifications SSIOD becomes an easily applicable method to most UHV systems and can be combined with other surface analytical methods like SPA-LEED, Auger-CMA, XPS, UPS or maybe even with microscopy such as the flange-on LEEM. The presented modifications also improve the resolution of the method to below
0.01
N
∕
m
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in situ
determination of the surface stress with a typical resolution of about
0.15
N
∕
m
. Here we present the latest version of SSIOD with major improvements concerning the sample shape and clamping, the laser system and the position detectors. With these modifications SSIOD becomes an easily applicable method to most UHV systems and can be combined with other surface analytical methods like SPA-LEED, Auger-CMA, XPS, UPS or maybe even with microscopy such as the flange-on LEEM. The presented modifications also improve the resolution of the method to below
0.01
N
∕
m
.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.1844191</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0034-6748 |
| ispartof | Review of scientific instruments, 2005-02, Vol.76 (2), p.023903-023903-7 |
| issn | 0034-6748 1089-7623 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_1844191 |
| source | AIP Journals Complete; AIP Digital Archive |
| title | SSIOD: The next generation |
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