Characteristics of a carbon nanotube field-effect transistor analyzed as a ballistic nanowire field-effect transistor
A general expression of the current-voltage characteristics of a ballistic nanowire field-effect transistor (FET) is derived. At T = 0 , the conductance, which is equal to the quantum conductance multiplied by the number of channels at zero bias, decreases stepwise toward current saturation as the d...
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| Veröffentlicht in: | Journal of applied physics 2005-02, Vol.97 (3), p.034306-034306-7 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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