Vertical nanowire light-emitting diode
We report room-temperature, white-color electroluminescence in vertically oriented ZnO nanowires. Excitonic luminescence around 380 nm is observed as a shoulder on a broader defect-related band covering all of the visible range and centered at 620 nm. The ZnO nanowires are grown in a low-temperature...
Gespeichert in:
| Veröffentlicht in: | Applied physics letters 2004-12, Vol.85 (24), p.6004-6006 |
|---|---|
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 6006 |
|---|---|
| container_issue | 24 |
| container_start_page | 6004 |
| container_title | Applied physics letters |
| container_volume | 85 |
| creator | Könenkamp, R. Word, Robert C. Schlegel, C. |
| description | We report room-temperature, white-color electroluminescence in vertically oriented ZnO nanowires. Excitonic luminescence around 380 nm is observed as a shoulder on a broader defect-related band covering all of the visible range and centered at 620 nm. The ZnO nanowires are grown in a low-temperature process on
Sn
O
2
-coated glass substrates, employing a technique that is suitable for large-area applications. The nanowires are robustly encapsulated in a thin polystyrene film deposited from high-molecular-weight solutions. Electron injection occurs through the transparent
Sn
O
2
layer, while hole injection is mediated by a
p
-doped polymer and an evaporated Au contact. Stable device operation is observed at ambient conditions on the time scale of 1 h. |
| doi_str_mv | 10.1063/1.1836873 |
| format | Article |
| fullrecord | <record><control><sourceid>scitation_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_1836873</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>apl</sourcerecordid><originalsourceid>FETCH-LOGICAL-c385t-d376c61b649d506b40e2922b78138b0d144b2ed0c28a50100bb926c6f04679c3</originalsourceid><addsrcrecordid>eNp1j81KxDAYRYMoWEcXvkFXgouM35e0SboRZPAPBtwMbkP-OkY6rSQB8e2tzMzS1eXCuRcOIdcISwTB73CJigsl-QmpEKSkHFGdkgoAOBVdi-fkIufPubaM84rcvIdUojNDPZpx-o4p1EPcfhQadrGUOG5rHycfLslZb4Ycrg65IJunx83qha7fnl9XD2vquGoL9VwKJ9CKpvMtCNtAYB1jVirkyoLHprEseHBMmRYQwNqOzYseGiE7xxfkdn_r0pRzCr3-SnFn0o9G0H9-GvXBb2bv92x2sZgSp_F_-Cipj5J6iPwX-BxV9Q</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Vertical nanowire light-emitting diode</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><creator>Könenkamp, R. ; Word, Robert C. ; Schlegel, C.</creator><creatorcontrib>Könenkamp, R. ; Word, Robert C. ; Schlegel, C.</creatorcontrib><description>We report room-temperature, white-color electroluminescence in vertically oriented ZnO nanowires. Excitonic luminescence around 380 nm is observed as a shoulder on a broader defect-related band covering all of the visible range and centered at 620 nm. The ZnO nanowires are grown in a low-temperature process on
Sn
O
2
-coated glass substrates, employing a technique that is suitable for large-area applications. The nanowires are robustly encapsulated in a thin polystyrene film deposited from high-molecular-weight solutions. Electron injection occurs through the transparent
Sn
O
2
layer, while hole injection is mediated by a
p
-doped polymer and an evaporated Au contact. Stable device operation is observed at ambient conditions on the time scale of 1 h.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.1836873</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>American Institute of Physics</publisher><ispartof>Applied physics letters, 2004-12, Vol.85 (24), p.6004-6006</ispartof><rights>2004 American Institute of Physics</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c385t-d376c61b649d506b40e2922b78138b0d144b2ed0c28a50100bb926c6f04679c3</citedby><cites>FETCH-LOGICAL-c385t-d376c61b649d506b40e2922b78138b0d144b2ed0c28a50100bb926c6f04679c3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Könenkamp, R.</creatorcontrib><creatorcontrib>Word, Robert C.</creatorcontrib><creatorcontrib>Schlegel, C.</creatorcontrib><title>Vertical nanowire light-emitting diode</title><title>Applied physics letters</title><description>We report room-temperature, white-color electroluminescence in vertically oriented ZnO nanowires. Excitonic luminescence around 380 nm is observed as a shoulder on a broader defect-related band covering all of the visible range and centered at 620 nm. The ZnO nanowires are grown in a low-temperature process on
Sn
O
2
-coated glass substrates, employing a technique that is suitable for large-area applications. The nanowires are robustly encapsulated in a thin polystyrene film deposited from high-molecular-weight solutions. Electron injection occurs through the transparent
Sn
O
2
layer, while hole injection is mediated by a
p
-doped polymer and an evaporated Au contact. Stable device operation is observed at ambient conditions on the time scale of 1 h.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2004</creationdate><recordtype>article</recordtype><recordid>eNp1j81KxDAYRYMoWEcXvkFXgouM35e0SboRZPAPBtwMbkP-OkY6rSQB8e2tzMzS1eXCuRcOIdcISwTB73CJigsl-QmpEKSkHFGdkgoAOBVdi-fkIufPubaM84rcvIdUojNDPZpx-o4p1EPcfhQadrGUOG5rHycfLslZb4Ycrg65IJunx83qha7fnl9XD2vquGoL9VwKJ9CKpvMtCNtAYB1jVirkyoLHprEseHBMmRYQwNqOzYseGiE7xxfkdn_r0pRzCr3-SnFn0o9G0H9-GvXBb2bv92x2sZgSp_F_-Cipj5J6iPwX-BxV9Q</recordid><startdate>20041213</startdate><enddate>20041213</enddate><creator>Könenkamp, R.</creator><creator>Word, Robert C.</creator><creator>Schlegel, C.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20041213</creationdate><title>Vertical nanowire light-emitting diode</title><author>Könenkamp, R. ; Word, Robert C. ; Schlegel, C.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c385t-d376c61b649d506b40e2922b78138b0d144b2ed0c28a50100bb926c6f04679c3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2004</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Könenkamp, R.</creatorcontrib><creatorcontrib>Word, Robert C.</creatorcontrib><creatorcontrib>Schlegel, C.</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Könenkamp, R.</au><au>Word, Robert C.</au><au>Schlegel, C.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Vertical nanowire light-emitting diode</atitle><jtitle>Applied physics letters</jtitle><date>2004-12-13</date><risdate>2004</risdate><volume>85</volume><issue>24</issue><spage>6004</spage><epage>6006</epage><pages>6004-6006</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>We report room-temperature, white-color electroluminescence in vertically oriented ZnO nanowires. Excitonic luminescence around 380 nm is observed as a shoulder on a broader defect-related band covering all of the visible range and centered at 620 nm. The ZnO nanowires are grown in a low-temperature process on
Sn
O
2
-coated glass substrates, employing a technique that is suitable for large-area applications. The nanowires are robustly encapsulated in a thin polystyrene film deposited from high-molecular-weight solutions. Electron injection occurs through the transparent
Sn
O
2
layer, while hole injection is mediated by a
p
-doped polymer and an evaporated Au contact. Stable device operation is observed at ambient conditions on the time scale of 1 h.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.1836873</doi><tpages>3</tpages><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 2004-12, Vol.85 (24), p.6004-6006 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_1836873 |
| source | AIP Journals Complete; AIP Digital Archive |
| title | Vertical nanowire light-emitting diode |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-15T09%3A31%3A39IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-scitation_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Vertical%20nanowire%20light-emitting%20diode&rft.jtitle=Applied%20physics%20letters&rft.au=K%C3%B6nenkamp,%20R.&rft.date=2004-12-13&rft.volume=85&rft.issue=24&rft.spage=6004&rft.epage=6006&rft.pages=6004-6006&rft.issn=0003-6951&rft.eissn=1077-3118&rft.coden=APPLAB&rft_id=info:doi/10.1063/1.1836873&rft_dat=%3Cscitation_cross%3Eapl%3C/scitation_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |