Current modulation of a hygroscopic insulator organic field-effect transistor

Current modulation of a hygroscopic insulator organic field-effect transistor

We have fabricated solution processable polymer transistors with high conductivity, requiring only a few volts for obtaining good current modulation. The devices can be fabricated and operated in air and the operation is greatly enhanced in humid atmosphere. Devices reach an On∕Off ratio of about 60...

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Veröffentlicht in:Applied physics letters 2004-10, Vol.85 (17), p.3887-3889
Hauptverfasser: Bäcklund, T. G., Sandberg, H. G. O., Österbacka, R., Stubb, H.
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container_end_page 3889
container_issue 17
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container_title Applied physics letters
container_volume 85
creator Bäcklund, T. G.
Sandberg, H. G. O.
Österbacka, R.
Stubb, H.
description We have fabricated solution processable polymer transistors with high conductivity, requiring only a few volts for obtaining good current modulation. The devices can be fabricated and operated in air and the operation is greatly enhanced in humid atmosphere. Devices reach an On∕Off ratio of about 600 and a subthreshold swing of 500 mV per decade operating on voltages less than 2 V . In this letter the mechanism behind the current modulation is investigated, and we show that the current is modulated through ion-assisted oxidation and reduction of the semiconductor by ions moving vertically in the insulator material to the transistor channel.
doi_str_mv 10.1063/1.1811798
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title Current modulation of a hygroscopic insulator organic field-effect transistor
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