Surface acoustic wave ultraviolet photodetectors using epitaxial ZnO multilayers grown on r -plane sapphire
A surface acoustic wave (SAW) ultraviolet (UV) photodetector is made of a zinc oxide ( ZnO ) based epitaxial multilayer structure on an r -plane sapphire ( r - Al 2 O 3 ) substrate. Piezoelectric and semiconducting ZnO layers are used for SAW excitation and photodetection, respectively. A thin Mg 0....
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| Veröffentlicht in: | Applied physics letters 2004-10, Vol.85 (17), p.3702-3704 |
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| container_title | Applied physics letters |
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| creator | Emanetoglu, Nuri W. Zhu, Jun Chen, Ying Zhong, Jian Chen, Yimin Lu, Yicheng |
| description | A surface acoustic wave (SAW) ultraviolet (UV) photodetector is made of a zinc oxide
(
ZnO
)
based epitaxial multilayer structure on an
r
-plane sapphire
(
r
-
Al
2
O
3
)
substrate. Piezoelectric and semiconducting
ZnO
layers are used for SAW excitation and photodetection, respectively. A thin
Mg
0.2
Zn
0.8
O
layer grown between the two
ZnO
layers isolates the semiconducting layer from the piezoelectric one. In contrast to previously reported SAW UV detectors on
GaN
and
LiNbO
3
, the Sezawa SAW mode in the
ZnO
∕
r
-
Al
2
O
3
system is used for its high acoustic velocity and large maximum effective piezoelectric coupling constant. The interaction of the SAW with the photogenerated carriers in the semiconducting
ZnO
layer results in a phase shift and an insertion loss change, as functions of light wavelength and power. The
ZnO
SAW UV detector can be used as a passive zero-power remote wireless UV sensor. |
| doi_str_mv | 10.1063/1.1811383 |
| format | Article |
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(
ZnO
)
based epitaxial multilayer structure on an
r
-plane sapphire
(
r
-
Al
2
O
3
)
substrate. Piezoelectric and semiconducting
ZnO
layers are used for SAW excitation and photodetection, respectively. A thin
Mg
0.2
Zn
0.8
O
layer grown between the two
ZnO
layers isolates the semiconducting layer from the piezoelectric one. In contrast to previously reported SAW UV detectors on
GaN
and
LiNbO
3
, the Sezawa SAW mode in the
ZnO
∕
r
-
Al
2
O
3
system is used for its high acoustic velocity and large maximum effective piezoelectric coupling constant. The interaction of the SAW with the photogenerated carriers in the semiconducting
ZnO
layer results in a phase shift and an insertion loss change, as functions of light wavelength and power. The
ZnO
SAW UV detector can be used as a passive zero-power remote wireless UV sensor.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.1811383</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>American Institute of Physics</publisher><ispartof>Applied physics letters, 2004-10, Vol.85 (17), p.3702-3704</ispartof><rights>2004 American Institute of Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c348t-ae17c179bf1ba031bb0964fb929224c9eb78dcb1997f1315d405f37d598c8d383</citedby><cites>FETCH-LOGICAL-c348t-ae17c179bf1ba031bb0964fb929224c9eb78dcb1997f1315d405f37d598c8d383</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>315,781,785,27928,27929</link.rule.ids></links><search><creatorcontrib>Emanetoglu, Nuri W.</creatorcontrib><creatorcontrib>Zhu, Jun</creatorcontrib><creatorcontrib>Chen, Ying</creatorcontrib><creatorcontrib>Zhong, Jian</creatorcontrib><creatorcontrib>Chen, Yimin</creatorcontrib><creatorcontrib>Lu, Yicheng</creatorcontrib><title>Surface acoustic wave ultraviolet photodetectors using epitaxial ZnO multilayers grown on r -plane sapphire</title><title>Applied physics letters</title><description>A surface acoustic wave (SAW) ultraviolet (UV) photodetector is made of a zinc oxide
(
ZnO
)
based epitaxial multilayer structure on an
r
-plane sapphire
(
r
-
Al
2
O
3
)
substrate. Piezoelectric and semiconducting
ZnO
layers are used for SAW excitation and photodetection, respectively. A thin
Mg
0.2
Zn
0.8
O
layer grown between the two
ZnO
layers isolates the semiconducting layer from the piezoelectric one. In contrast to previously reported SAW UV detectors on
GaN
and
LiNbO
3
, the Sezawa SAW mode in the
ZnO
∕
r
-
Al
2
O
3
system is used for its high acoustic velocity and large maximum effective piezoelectric coupling constant. The interaction of the SAW with the photogenerated carriers in the semiconducting
ZnO
layer results in a phase shift and an insertion loss change, as functions of light wavelength and power. The
ZnO
SAW UV detector can be used as a passive zero-power remote wireless UV sensor.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2004</creationdate><recordtype>article</recordtype><recordid>eNp1kEtLAzEUhYMoWKsL_0G2LqbmTuaRbAQpvqDQhbpxE5JMpo1OJ0OSae2_N9K6dHW4nI8L50PoGsgMSEVvYQYMgDJ6giZA6jqjAOwUTQghNKt4CefoIoTPdJY5pRP09Tr6VmqDpXZjiFbjndwaPHbRy611nYl4WLvoGhONjs4HPAbbr7AZbJTfVnb4o1_iTeJtJ_cm9Svvdj12PfY4GzrZGxzkMKytN5forJVdMFfHnKL3x4e3-XO2WD69zO8XmaYFi5k0UGuouWpBSUJBKcKrolU853leaG5UzRqtgPO6BQplU5CypXVTcqZZk6ZP0c3hr_YuBG9aMXi7kX4vgIhfSwLE0VJi7w5s0GlQtK7_Hz6qEn-qRFJFfwBEanGB</recordid><startdate>20041025</startdate><enddate>20041025</enddate><creator>Emanetoglu, Nuri W.</creator><creator>Zhu, Jun</creator><creator>Chen, Ying</creator><creator>Zhong, Jian</creator><creator>Chen, Yimin</creator><creator>Lu, Yicheng</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20041025</creationdate><title>Surface acoustic wave ultraviolet photodetectors using epitaxial ZnO multilayers grown on r -plane sapphire</title><author>Emanetoglu, Nuri W. ; Zhu, Jun ; Chen, Ying ; Zhong, Jian ; Chen, Yimin ; Lu, Yicheng</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c348t-ae17c179bf1ba031bb0964fb929224c9eb78dcb1997f1315d405f37d598c8d383</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2004</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Emanetoglu, Nuri W.</creatorcontrib><creatorcontrib>Zhu, Jun</creatorcontrib><creatorcontrib>Chen, Ying</creatorcontrib><creatorcontrib>Zhong, Jian</creatorcontrib><creatorcontrib>Chen, Yimin</creatorcontrib><creatorcontrib>Lu, Yicheng</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Emanetoglu, Nuri W.</au><au>Zhu, Jun</au><au>Chen, Ying</au><au>Zhong, Jian</au><au>Chen, Yimin</au><au>Lu, Yicheng</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Surface acoustic wave ultraviolet photodetectors using epitaxial ZnO multilayers grown on r -plane sapphire</atitle><jtitle>Applied physics letters</jtitle><date>2004-10-25</date><risdate>2004</risdate><volume>85</volume><issue>17</issue><spage>3702</spage><epage>3704</epage><pages>3702-3704</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>A surface acoustic wave (SAW) ultraviolet (UV) photodetector is made of a zinc oxide
(
ZnO
)
based epitaxial multilayer structure on an
r
-plane sapphire
(
r
-
Al
2
O
3
)
substrate. Piezoelectric and semiconducting
ZnO
layers are used for SAW excitation and photodetection, respectively. A thin
Mg
0.2
Zn
0.8
O
layer grown between the two
ZnO
layers isolates the semiconducting layer from the piezoelectric one. In contrast to previously reported SAW UV detectors on
GaN
and
LiNbO
3
, the Sezawa SAW mode in the
ZnO
∕
r
-
Al
2
O
3
system is used for its high acoustic velocity and large maximum effective piezoelectric coupling constant. The interaction of the SAW with the photogenerated carriers in the semiconducting
ZnO
layer results in a phase shift and an insertion loss change, as functions of light wavelength and power. The
ZnO
SAW UV detector can be used as a passive zero-power remote wireless UV sensor.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.1811383</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 2004-10, Vol.85 (17), p.3702-3704 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_1811383 |
| source | AIP Journals Complete; AIP Digital Archive |
| title | Surface acoustic wave ultraviolet photodetectors using epitaxial ZnO multilayers grown on r -plane sapphire |
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