Efficient Raman amplification in silicon-on-insulator waveguides
We describe a silicon-on-insulator waveguide Raman amplifier which achieves a large fiber-to-fiber optical gain of 6.8 dB using stimulated Raman scattering in a 1.7 - cm -long silicon waveguide. By using picosecond pulse pumping at 1557.4 nm wavelength, high net optical gain at the first-order Stoke...
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Veröffentlicht in: | Applied physics letters 2004-10, Vol.85 (16), p.3343-3345 |
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creator | Liang, T. K. Tsang, H. K. |
description | We describe a silicon-on-insulator waveguide Raman amplifier which achieves a large fiber-to-fiber optical gain of
6.8
dB
using stimulated Raman scattering in a
1.7
-
cm
-long silicon waveguide. By using picosecond pulse pumping at
1557.4
nm
wavelength, high net optical gain at the first-order Stokes wavelength of
1694.6
nm
was measured. The optical loss from two-photon absorption generated free carriers was reduced by using a low pulse duty cycle and picosecond pulse pumping. |
doi_str_mv | 10.1063/1.1807960 |
format | Article |
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6.8
dB
using stimulated Raman scattering in a
1.7
-
cm
-long silicon waveguide. By using picosecond pulse pumping at
1557.4
nm
wavelength, high net optical gain at the first-order Stokes wavelength of
1694.6
nm
was measured. The optical loss from two-photon absorption generated free carriers was reduced by using a low pulse duty cycle and picosecond pulse pumping.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.1807960</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>American Institute of Physics</publisher><ispartof>Applied physics letters, 2004-10, Vol.85 (16), p.3343-3345</ispartof><rights>2004 American Institute of Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c348t-4e6e0786a2c4f9454fb66a92c0ac101847344f424a3c9bad301163cbecd3079c3</citedby><cites>FETCH-LOGICAL-c348t-4e6e0786a2c4f9454fb66a92c0ac101847344f424a3c9bad301163cbecd3079c3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Liang, T. K.</creatorcontrib><creatorcontrib>Tsang, H. K.</creatorcontrib><title>Efficient Raman amplification in silicon-on-insulator waveguides</title><title>Applied physics letters</title><description>We describe a silicon-on-insulator waveguide Raman amplifier which achieves a large fiber-to-fiber optical gain of
6.8
dB
using stimulated Raman scattering in a
1.7
-
cm
-long silicon waveguide. By using picosecond pulse pumping at
1557.4
nm
wavelength, high net optical gain at the first-order Stokes wavelength of
1694.6
nm
was measured. The optical loss from two-photon absorption generated free carriers was reduced by using a low pulse duty cycle and picosecond pulse pumping.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2004</creationdate><recordtype>article</recordtype><recordid>eNp1z01LxDAQBuAgCq6rB_9Brx6yzjRp0l5EWXZVWBBEz2GaTSTSpkvTVfz3dj_wJgzMBy8DD2PXCDMEJW5xhiXoSsEJmyBozQViecomACC4qgo8ZxcpfY5rkQsxYfcL74MNLg7ZK7UUM2o3TRhPNIQuZiFmKTTBdpGPFWLaNjR0ffZNX-5jG9YuXbIzT01yV8c-Ze_Lxdv8ia9eHp_nDytuhSwHLp1yoEtFuZW-koX0tVJU5RbIImAptZDSy1ySsFVNawGIStja2XHUlRVTdnP4a_supd55s-lDS_2PQTA7ukFzpI_Zu0M22TDsIf-H__xm7zc7v_gF7LlglA</recordid><startdate>20041018</startdate><enddate>20041018</enddate><creator>Liang, T. K.</creator><creator>Tsang, H. K.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20041018</creationdate><title>Efficient Raman amplification in silicon-on-insulator waveguides</title><author>Liang, T. K. ; Tsang, H. K.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c348t-4e6e0786a2c4f9454fb66a92c0ac101847344f424a3c9bad301163cbecd3079c3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2004</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Liang, T. K.</creatorcontrib><creatorcontrib>Tsang, H. K.</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Liang, T. K.</au><au>Tsang, H. K.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Efficient Raman amplification in silicon-on-insulator waveguides</atitle><jtitle>Applied physics letters</jtitle><date>2004-10-18</date><risdate>2004</risdate><volume>85</volume><issue>16</issue><spage>3343</spage><epage>3345</epage><pages>3343-3345</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>We describe a silicon-on-insulator waveguide Raman amplifier which achieves a large fiber-to-fiber optical gain of
6.8
dB
using stimulated Raman scattering in a
1.7
-
cm
-long silicon waveguide. By using picosecond pulse pumping at
1557.4
nm
wavelength, high net optical gain at the first-order Stokes wavelength of
1694.6
nm
was measured. The optical loss from two-photon absorption generated free carriers was reduced by using a low pulse duty cycle and picosecond pulse pumping.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.1807960</doi><tpages>3</tpages></addata></record> |
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ispartof | Applied physics letters, 2004-10, Vol.85 (16), p.3343-3345 |
issn | 0003-6951 1077-3118 |
language | eng |
recordid | cdi_crossref_primary_10_1063_1_1807960 |
source | AIP Journals Complete; AIP Digital Archive |
title | Efficient Raman amplification in silicon-on-insulator waveguides |
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