Positional control of self-assembled quantum dots by patterning nanoscale SiN islands
We propose a method for obtaining position-controlled self-assembled quantum dots. The self-assembled InGaAs quantum dots are grown on a GaAs (311) B substrate on which SiN islands have been patterned using a nanolithographic technique. The SiN pattern determines the position of the quantum dots as...
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| Veröffentlicht in: | Applied physics letters 2004-10, Vol.85 (14), p.2836-2838 |
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| container_issue | 14 |
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| container_title | Applied physics letters |
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| creator | Gotoh, H. Kamada, H. Saitoh, T. Shigemori, S. Temmyo, J. |
| description | We propose a method for obtaining position-controlled self-assembled quantum dots. The self-assembled InGaAs quantum dots are grown on a GaAs (311) B substrate on which SiN islands have been patterned using a nanolithographic technique. The SiN pattern determines the position of the quantum dots as well as their optical properties. The positional uniformity and photoluminescence spectrum strongly depend on the pitch of the SiN pattern. At an optimum pitch, uniformly arranged quantum dots and intense photoluminescence spectra with sharp peaks are obtained. |
| doi_str_mv | 10.1063/1.1804251 |
| format | Article |
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| ispartof | Applied physics letters, 2004-10, Vol.85 (14), p.2836-2838 |
| issn | 0003-6951 1077-3118 |
| language | eng |
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| source | AIP Journals Complete; AIP Digital Archive |
| title | Positional control of self-assembled quantum dots by patterning nanoscale SiN islands |
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