Redistribution dynamics of optically generated charges in In ( Ga ) As ∕ GaAs self-assembled quantum dots
We investigate a quantum-dot-based field-effect device allowing selective optical charging (electrons or holes) of a sub-ensemble of InGaAs ∕ GaAs self-assembled quantum dots using resonant excitation. The dynamics of the photogenerated charge distribution is studied as a function of excitation ener...
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Veröffentlicht in: | Applied physics letters 2004-09, Vol.85 (13), p.2592-2594 |
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Hauptverfasser: | , , , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | We investigate a quantum-dot-based field-effect device allowing selective optical charging (electrons or holes) of a sub-ensemble of
InGaAs
∕
GaAs
self-assembled quantum dots using resonant excitation. The dynamics of the photogenerated charge distribution is studied as a function of excitation energy and lattice temperature. Thermally activated redistribution of charge among the quantum dot ensemble is shown to occur, over a microsecond time scale, only at elevated
(
T
∼
100
K
)
temperatures. An activation energy analysis demonstrates that the two-dimensional wetting layer is the main charge redistribution channel and provides information about the single-particle energy structure of the quantum dots. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.1784040 |