Redistribution dynamics of optically generated charges in In ( Ga ) As ∕ GaAs self-assembled quantum dots

We investigate a quantum-dot-based field-effect device allowing selective optical charging (electrons or holes) of a sub-ensemble of InGaAs ∕ GaAs self-assembled quantum dots using resonant excitation. The dynamics of the photogenerated charge distribution is studied as a function of excitation ener...

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Veröffentlicht in:Applied physics letters 2004-09, Vol.85 (13), p.2592-2594
Hauptverfasser: Ducommun, Y., Kroutvar, M., Reimer, M., Bichler, M., Schuh, D., Abstreiter, G., Finley, J. J.
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Sprache:eng
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Zusammenfassung:We investigate a quantum-dot-based field-effect device allowing selective optical charging (electrons or holes) of a sub-ensemble of InGaAs ∕ GaAs self-assembled quantum dots using resonant excitation. The dynamics of the photogenerated charge distribution is studied as a function of excitation energy and lattice temperature. Thermally activated redistribution of charge among the quantum dot ensemble is shown to occur, over a microsecond time scale, only at elevated ( T ∼ 100 K ) temperatures. An activation energy analysis demonstrates that the two-dimensional wetting layer is the main charge redistribution channel and provides information about the single-particle energy structure of the quantum dots.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1784040