Sexithiophene films on clean and oxidized Si(111) surfaces: Growth and electronic structure

The growth and the electronic properties of sexithiophene thin films on silicon surfaces have been studied by angle resolved ultraviolet photoelectron spectroscopy while morphology and crystalline order have been assessed by atomic force microscopy and x-ray diffraction. The influence of the surface...

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Veröffentlicht in:Journal of applied physics 2004-09, Vol.96 (5), p.2716-2724
Hauptverfasser: Ivanco, J., Krenn, J. R., Ramsey, M. G., Netzer, F. P., Haber, T., Resel, R., Haase, A., Stadlober, B., Jakopic, G.
Format: Artikel
Sprache:eng
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