Aluminum, oxide, and silicon phonons by inelastic electron tunneling spectroscopy on metal-oxide-semiconductor tunnel junctions: Accurate determination and effect of electrical stress
We do inelastic electrical tunneling spectroscopy (IETS) to provide information concerning the vibrational and excitational modes present in silicon dioxide and phonon modes of the electrodes, and of silicon dioxide in metal-oxide-silicon tunnel junction. We analyze the phonon spectra coming from di...
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| Veröffentlicht in: | Journal of applied physics 2004-11, Vol.96 (9), p.5042-5049 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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