Single-crystalline gallium-doped indium oxide nanowires
High-density gallium (Ga)-doped indium oxide ( In 2 O 3 ) nanowires whose Ga content [ Ga ∕ ( In + Ga ) atomic ratio] is 0%, 7%, and 45%, were synthesized by thermal evaporation. They have an average diameter of 50 nm and consist of nearly single-crystalline cubic In 2 O 3 structure with the [010] g...
Gespeichert in:
| Veröffentlicht in: | Applied physics letters 2004-07, Vol.85 (3), p.461-463 |
|---|---|
| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Zusammenfassung: | High-density gallium (Ga)-doped indium oxide
(
In
2
O
3
)
nanowires whose Ga content [
Ga
∕
(
In
+
Ga
)
atomic ratio] is 0%, 7%, and 45%, were synthesized by thermal evaporation. They have an average diameter of
50
nm
and consist of nearly single-crystalline cubic
In
2
O
3
structure with the [010] growth direction. High-resolution x-ray diffraction analysis reveals that as the Ga content increases the position of
In
2
O
3
peaks shifts to the higher angle and a crystalline form
(
Ga
,
In
)
2
O
3
is produced. We estimated a 0.4% reduction of the lattice constant for 45% Ga-doped nanowires. |
|---|---|
| ISSN: | 0003-6951 1077-3118 |
| DOI: | 10.1063/1.1771816 |