Electrical characteristics of AlxGa1−xN Schottky diodes prepared by a two-step surface treatment

Near-ideal Schottky barrier contacts to n-type Al0.22Ga0.78N have been developed by a two-step surface treatment technique. Plasma etching of the AlxGa1−xN surface prior to Schottky metal deposition, combined with sequential chemical treatment of the etched surface, holds promise for developing high...

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Veröffentlicht in:	Journal of applied physics 2004-09, Vol.96 (6), p.3286-3295
Hauptverfasser:	Motayed, Abhishek, Sharma, Ashok, Jones, Kenneth A., Derenge, Michael A., Iliadis, Agis A., Mohammad, S. Noor
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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