Positive exchange bias in ferromagnetic La0.67Sr0.33MnO3∕SrRuO3 bilayers
Epitaxial La0.67Sr0.33MnO3(LSMO)∕SrRuO3(SRO) ferromagnetic bilayers have been grown on (001)SrTiO3(STO) substrates by pulsed laser deposition with atomic layer control. We observe a shift in the magnetic hysteresis loop of the LSMO layer in the same direction as the applied biasing field (positive e...
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Veröffentlicht in: | Applied physics letters 2004-06, Vol.84 (26), p.5458-5460 |
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creator | Ke, X. Rzchowski, M. S. Belenky, L. J. Eom, C. B. |
description | Epitaxial La0.67Sr0.33MnO3(LSMO)∕SrRuO3(SRO) ferromagnetic bilayers have been grown on (001)SrTiO3(STO) substrates by pulsed laser deposition with atomic layer control. We observe a shift in the magnetic hysteresis loop of the LSMO layer in the same direction as the applied biasing field (positive exchange bias). The effect is not present above the Curie temperature of the SRO layer (TcSRO), and its magnitude increases rapidly as the temperature is lowered below TcSRO. The direction of the shift is consistent with an antiferromagnetic exchange coupling between the ferromagnetic LSMO layer and the ferromagnetic SRO layer. We propose that atomic layer charge transfer modifies the electronic state at the interface, resulting in the observed antiferromagnetic interfacial exchange coupling. |
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fullrecord | <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_1767955</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1063_1_1767955</sourcerecordid><originalsourceid>FETCH-LOGICAL-c225t-9c58db992b4f2f4be71a93512e37efa565bdc123a64b0d18ba90401b736c0cbf3</originalsourceid><addsrcrecordid>eNotkM1KAzEURoMoOFYXvsFsXcx4b-4kaZZS_GVkxOp6SNKkRtqpJFXsG_gCvqBPYsWuDh8cvsVh7BShRpB0jjUqqbQQe6xAUKoixPE-KwCAKqkFHrKjnF-3U3Cigt09rHJcxw9f-k_3Yoa5L200uYxDGXxKq6WZD34dXdkaqKWaJqiJ7oeOfr6-p-nxvaOtvzAbn_IxOwhmkf3JjiP2fHX5NLmp2u76dnLRVo5zsa60E-OZ1ZrbJvDQWK_QaBLIPSkfjJDCzhxyMrKxMMOxNRoaQKtIOnA20Iid_f-6tMo5-dC_pbg0adMj9H8Reux3EegXDhxOFQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Positive exchange bias in ferromagnetic La0.67Sr0.33MnO3∕SrRuO3 bilayers</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><creator>Ke, X. ; Rzchowski, M. S. ; Belenky, L. J. ; Eom, C. B.</creator><creatorcontrib>Ke, X. ; Rzchowski, M. S. ; Belenky, L. J. ; Eom, C. B.</creatorcontrib><description>Epitaxial La0.67Sr0.33MnO3(LSMO)∕SrRuO3(SRO) ferromagnetic bilayers have been grown on (001)SrTiO3(STO) substrates by pulsed laser deposition with atomic layer control. We observe a shift in the magnetic hysteresis loop of the LSMO layer in the same direction as the applied biasing field (positive exchange bias). The effect is not present above the Curie temperature of the SRO layer (TcSRO), and its magnitude increases rapidly as the temperature is lowered below TcSRO. The direction of the shift is consistent with an antiferromagnetic exchange coupling between the ferromagnetic LSMO layer and the ferromagnetic SRO layer. We propose that atomic layer charge transfer modifies the electronic state at the interface, resulting in the observed antiferromagnetic interfacial exchange coupling.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.1767955</identifier><language>eng</language><ispartof>Applied physics letters, 2004-06, Vol.84 (26), p.5458-5460</ispartof><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c225t-9c58db992b4f2f4be71a93512e37efa565bdc123a64b0d18ba90401b736c0cbf3</citedby><cites>FETCH-LOGICAL-c225t-9c58db992b4f2f4be71a93512e37efa565bdc123a64b0d18ba90401b736c0cbf3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Ke, X.</creatorcontrib><creatorcontrib>Rzchowski, M. S.</creatorcontrib><creatorcontrib>Belenky, L. J.</creatorcontrib><creatorcontrib>Eom, C. B.</creatorcontrib><title>Positive exchange bias in ferromagnetic La0.67Sr0.33MnO3∕SrRuO3 bilayers</title><title>Applied physics letters</title><description>Epitaxial La0.67Sr0.33MnO3(LSMO)∕SrRuO3(SRO) ferromagnetic bilayers have been grown on (001)SrTiO3(STO) substrates by pulsed laser deposition with atomic layer control. We observe a shift in the magnetic hysteresis loop of the LSMO layer in the same direction as the applied biasing field (positive exchange bias). The effect is not present above the Curie temperature of the SRO layer (TcSRO), and its magnitude increases rapidly as the temperature is lowered below TcSRO. The direction of the shift is consistent with an antiferromagnetic exchange coupling between the ferromagnetic LSMO layer and the ferromagnetic SRO layer. We propose that atomic layer charge transfer modifies the electronic state at the interface, resulting in the observed antiferromagnetic interfacial exchange coupling.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2004</creationdate><recordtype>article</recordtype><recordid>eNotkM1KAzEURoMoOFYXvsFsXcx4b-4kaZZS_GVkxOp6SNKkRtqpJFXsG_gCvqBPYsWuDh8cvsVh7BShRpB0jjUqqbQQe6xAUKoixPE-KwCAKqkFHrKjnF-3U3Cigt09rHJcxw9f-k_3Yoa5L200uYxDGXxKq6WZD34dXdkaqKWaJqiJ7oeOfr6-p-nxvaOtvzAbn_IxOwhmkf3JjiP2fHX5NLmp2u76dnLRVo5zsa60E-OZ1ZrbJvDQWK_QaBLIPSkfjJDCzhxyMrKxMMOxNRoaQKtIOnA20Iid_f-6tMo5-dC_pbg0adMj9H8Reux3EegXDhxOFQ</recordid><startdate>20040628</startdate><enddate>20040628</enddate><creator>Ke, X.</creator><creator>Rzchowski, M. S.</creator><creator>Belenky, L. J.</creator><creator>Eom, C. B.</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20040628</creationdate><title>Positive exchange bias in ferromagnetic La0.67Sr0.33MnO3∕SrRuO3 bilayers</title><author>Ke, X. ; Rzchowski, M. S. ; Belenky, L. J. ; Eom, C. B.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c225t-9c58db992b4f2f4be71a93512e37efa565bdc123a64b0d18ba90401b736c0cbf3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2004</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ke, X.</creatorcontrib><creatorcontrib>Rzchowski, M. S.</creatorcontrib><creatorcontrib>Belenky, L. J.</creatorcontrib><creatorcontrib>Eom, C. B.</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ke, X.</au><au>Rzchowski, M. S.</au><au>Belenky, L. J.</au><au>Eom, C. B.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Positive exchange bias in ferromagnetic La0.67Sr0.33MnO3∕SrRuO3 bilayers</atitle><jtitle>Applied physics letters</jtitle><date>2004-06-28</date><risdate>2004</risdate><volume>84</volume><issue>26</issue><spage>5458</spage><epage>5460</epage><pages>5458-5460</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>Epitaxial La0.67Sr0.33MnO3(LSMO)∕SrRuO3(SRO) ferromagnetic bilayers have been grown on (001)SrTiO3(STO) substrates by pulsed laser deposition with atomic layer control. We observe a shift in the magnetic hysteresis loop of the LSMO layer in the same direction as the applied biasing field (positive exchange bias). The effect is not present above the Curie temperature of the SRO layer (TcSRO), and its magnitude increases rapidly as the temperature is lowered below TcSRO. The direction of the shift is consistent with an antiferromagnetic exchange coupling between the ferromagnetic LSMO layer and the ferromagnetic SRO layer. We propose that atomic layer charge transfer modifies the electronic state at the interface, resulting in the observed antiferromagnetic interfacial exchange coupling.</abstract><doi>10.1063/1.1767955</doi><tpages>3</tpages><oa>free_for_read</oa></addata></record> |
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title | Positive exchange bias in ferromagnetic La0.67Sr0.33MnO3∕SrRuO3 bilayers |
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