Stacking fault formation in SiC p-i-n diodes of (11-20) orientation
Formation of stacking faults in 4H-SiC p-i-n diodes fabricated on a (11-20) oriented substrate was investigated using optical emission microscopy and transmission electron microscopy. The stacking faults developed and expanded in basal planes under forward bias with current densities between 1.0 and...
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| Veröffentlicht in: | Applied physics letters 2004-06, Vol.84 (25), p.5267-5269 |
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| container_end_page | 5269 |
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| container_issue | 25 |
| container_start_page | 5267 |
| container_title | Applied physics letters |
| container_volume | 84 |
| creator | Ha, S. Hu, K. Skowronski, M. Sumakeris, J. J. Paisley, M. J. Das, M. K. |
| description | Formation of stacking faults in 4H-SiC p-i-n diodes fabricated on a (11-20) oriented substrate was investigated using optical emission microscopy and transmission electron microscopy. The stacking faults developed and expanded in basal planes under forward bias with current densities between 1.0 and 100A∕cm2. Preexistent basal plane dislocations threading the blocking layer served as nucleation sites. Transmission electron microscopy identified the stacking faults as single-layer Shockley type. The stacking fault expansion in diodes on (11-20) wafers is inconsistent with substrate-induced biaxial stress as the driving force. |
| doi_str_mv | 10.1063/1.1765209 |
| format | Article |
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J.</creatorcontrib><creatorcontrib>Paisley, M. J.</creatorcontrib><creatorcontrib>Das, M. K.</creatorcontrib><title>Stacking fault formation in SiC p-i-n diodes of (11-20) orientation</title><title>Applied physics letters</title><description>Formation of stacking faults in 4H-SiC p-i-n diodes fabricated on a (11-20) oriented substrate was investigated using optical emission microscopy and transmission electron microscopy. The stacking faults developed and expanded in basal planes under forward bias with current densities between 1.0 and 100A∕cm2. Preexistent basal plane dislocations threading the blocking layer served as nucleation sites. Transmission electron microscopy identified the stacking faults as single-layer Shockley type. 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K.</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ha, S.</au><au>Hu, K.</au><au>Skowronski, M.</au><au>Sumakeris, J. J.</au><au>Paisley, M. J.</au><au>Das, M. K.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Stacking fault formation in SiC p-i-n diodes of (11-20) orientation</atitle><jtitle>Applied physics letters</jtitle><date>2004-06-21</date><risdate>2004</risdate><volume>84</volume><issue>25</issue><spage>5267</spage><epage>5269</epage><pages>5267-5269</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>Formation of stacking faults in 4H-SiC p-i-n diodes fabricated on a (11-20) oriented substrate was investigated using optical emission microscopy and transmission electron microscopy. The stacking faults developed and expanded in basal planes under forward bias with current densities between 1.0 and 100A∕cm2. Preexistent basal plane dislocations threading the blocking layer served as nucleation sites. Transmission electron microscopy identified the stacking faults as single-layer Shockley type. The stacking fault expansion in diodes on (11-20) wafers is inconsistent with substrate-induced biaxial stress as the driving force.</abstract><doi>10.1063/1.1765209</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 2004-06, Vol.84 (25), p.5267-5269 |
| issn | 0003-6951 1077-3118 |
| language | eng |
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| source | AIP Journals Complete; AIP Digital Archive |
| title | Stacking fault formation in SiC p-i-n diodes of (11-20) orientation |
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