High temperature high-dose implantation of aluminum in 4H-SiC
Heavily doped p-type layers obtained by implanting aluminum near its solubility limit (∼2×1020Al∕cm3) in 4H-SiC are characterized as a function of the implant and anneal temperatures. For a typical implant temperature of 650°C, Al activation rates of ∼6%–35% are obtained for anneals from 1600 to 175...
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Veröffentlicht in: | Applied physics letters 2004-06, Vol.84 (25), p.5195-5197 |
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Hauptverfasser: | , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | Heavily doped p-type layers obtained by implanting aluminum near its solubility limit (∼2×1020Al∕cm3) in 4H-SiC are characterized as a function of the implant and anneal temperatures. For a typical implant temperature of 650°C, Al activation rates of ∼6%–35% are obtained for anneals from 1600 to 1750°C, respectively. For higher temperature implants at 1000°C, the Al activation rates are significantly improved, approaching ∼100% for the same anneal temperatures, with a best p-type resistivity of ∼0.20Ωcm. For SiC device fabrication, these results demonstrate that by using higher Al implant temperatures, lower anneal temperatures can be used while obtaining close to 100% Al activation. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.1764934 |