Carbon nanotube transistor optimization by chemical control of the nanotube–metal interface

Most carbon nanotube transistors work as Schottky barrier transistors. We show that chemical treatment of operational p-type nanotube transistors by trifluoro-acetic acid (TFA) leads to the drastic improvement of all the key device parameters. This effect is due to the highly polar nature of the TFA...

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Veröffentlicht in:Applied physics letters 2004-06, Vol.84 (25), p.5106-5108
Hauptverfasser: Auvray, S., Borghetti, J., Goffman, M. F., Filoramo, A., Derycke, V., Bourgoin, J. P., Jost, O.
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container_end_page 5108
container_issue 25
container_start_page 5106
container_title Applied physics letters
container_volume 84
creator Auvray, S.
Borghetti, J.
Goffman, M. F.
Filoramo, A.
Derycke, V.
Bourgoin, J. P.
Jost, O.
description Most carbon nanotube transistors work as Schottky barrier transistors. We show that chemical treatment of operational p-type nanotube transistors by trifluoro-acetic acid (TFA) leads to the drastic improvement of all the key device parameters. This effect is due to the highly polar nature of the TFA molecule which, once adsorbed at the metal–nanotube interface, lowers the Schottky barrier for the holes and thus favors their injection.
doi_str_mv 10.1063/1.1762987
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title Carbon nanotube transistor optimization by chemical control of the nanotube–metal interface
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