Combined effect of preferential orientation and Zr/Ti atomic ratio on electrical properties of Pb(ZrxTi1−x)O3 thin films

Lead zirconate titanate [Pb(ZrxTi1−x)O3, PZT] thin films with various compositions, whose Zr/Ti ratio were varied as 40/60, 48/52, 47/53, and 60/40, were deposited on Pt(111)/Ti/SiO2/Si substrates by sol-gel method. A seeding layer was introduced between the PZT layer and the bottom electrode to con...

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Veröffentlicht in:Journal of applied physics 2004-07, Vol.96 (1), p.590-595
Hauptverfasser: Gong, Wen, Li, Jing-Feng, Chu, Xiangcheng, Gui, Zhilun, Li, Longtu
Format: Artikel
Sprache:eng
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Zusammenfassung:Lead zirconate titanate [Pb(ZrxTi1−x)O3, PZT] thin films with various compositions, whose Zr/Ti ratio were varied as 40/60, 48/52, 47/53, and 60/40, were deposited on Pt(111)/Ti/SiO2/Si substrates by sol-gel method. A seeding layer was introduced between the PZT layer and the bottom electrode to control the texture of overlaid PZT thin films. A single perovskite PZT thin film with absolute (100) texture was obtained, when lead oxide was used as the seeding crystal, whereas titanium dioxide resulted in highly [111]-oriented PZT films. The dielectric and ferroelectric properties of PZT films with different preferential orientations were evaluated systemically as a function of composition. The maximums of relative dielectric constant were obtained in the morphotropic phase boundary region for both (100)- and (111)-textured PZT films. The ferroelectric properties also greatly depend on films’ texture and composition. The intrinsic and extrinsic contributions to dielectric and ferroelectric properties were discussed.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.1759072