Effects of hydrogen implantation temperature on ion-cut of silicon

We have studied the effect of ion implantation temperature on the nature of cleavage and layer transfer, and the electrical properties in hydrogen implanted p-Si. The lattice damage and the hydrogen concentration in the as-implanted Si and transferred Si films were analyzed with elastic recoil detec...

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Veröffentlicht in:	Journal of applied physics 2004-07, Vol.96 (1), p.280-288
Hauptverfasser:	Lee, J. K., Nastasi, M., Theodore, N. David, Smalley, A., Alford, T. L., Mayer, J. W., Cai, M., Lau, S. S.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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