p Layers on Vacuum Heated Silicon

It has been established that when silicon is heated above 1300°K in a borosilicate glass vacuum system from 1011 to 1015 acceptors per cm2 are normally added to the silicon surface, even though the glass walls remain at room temperature. The acceptor diffuses into the surface upon heating forming a...

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Veröffentlicht in:	Journal of applied physics 1960-06, Vol.31 (6), p.979-985
Hauptverfasser:	Allen, F. G., Buck, T. M., Law, J. T.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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