Annealing and Arsenic Overpressure Experiments on Defects in Gallium Arsenide

Previous experiments reported by the authors revealed a measurable expansion in the lattice constant of GaAs single crystals quenched from temperatures above 1000°C. These results led to the conclusion that a defect structure consisting of both Frenkel pairs and Schottky vacancies was produced in th...

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Veröffentlicht in:	Journal of applied physics 1966-04, Vol.37 (5), p.2098-2103
Hauptverfasser:	Potts, H. R., Pearson, G. L.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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