Analysis of the Effect of Fast-Neutron Bombardment on the Current-Voltage Characteristic of a Conductivity-Modulated p-i-n Diode
Fast-neutron bombardment of silicon diodes changes the excess carrier diffusion length without significantly changing other diode parameters. Such bombardment is thus a useful tool for investigating diode theory. The technique is applied to an expression for the current-voltage characteristic develo...
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| Veröffentlicht in: | Journal of Applied Physics (U.S.) 1966-02, Vol.37 (2), p.745-755 |
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| container_end_page | 755 |
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| container_issue | 2 |
| container_start_page | 745 |
| container_title | Journal of Applied Physics (U.S.) |
| container_volume | 37 |
| creator | Swartz, John M. Thurston, Marlin O. |
| description | Fast-neutron bombardment of silicon diodes changes the excess carrier diffusion length without significantly changing other diode parameters. Such bombardment is thus a useful tool for investigating diode theory. The technique is applied to an expression for the current-voltage characteristic developed for the wide-based p-i-n diode. For high level injection, there are two current density ranges of interest. First, a range where the base voltage is independent of current density and the total junction voltage V varies as exp(qV/2kT) with current. This region corresponds to unity emitter efficiency at each of the junctions. For higher current densities, the emitter efficiency decreases, and the base voltage increases as the square root of the current density. Also, the total junction voltage varies as exp(qV/kT) with current. The theoretical results are then shown to fit the current-voltage characteristics of experimental wide-based silicon p-i-n diodes. |
| doi_str_mv | 10.1063/1.1708249 |
| format | Article |
| fullrecord | <record><control><sourceid>crossref_osti_</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_1708249</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1063_1_1708249</sourcerecordid><originalsourceid>FETCH-LOGICAL-c320t-be55e55a5ebfe8f5754cd5374b4a2829ec353f6914080c79c24407e2a9328c253</originalsourceid><addsrcrecordid>eNotkM1KAzEUhYMoWKsL32Bw5yI1v02yrGOrQtWNuh0ymcRGpklJUqE7H92pLVy4HO7H4Z4DwDVGE4ym9A5PsECSMHUCRhhJBQXn6BSMECIYSiXUObjI-RshjCVVI_A7C7rfZZ-r6KqystXcOWvKXi10LvDVbkuKobqP61anbm3DcAv_ZL1NaZDwM_ZFfw16pZM2xSafizd7B13VMXRbU_yPLzv4Erttr4vtqg30MFQPPnb2Epw53Wd7ddxj8LGYv9dPcPn2-FzPltBQggpsLefDaG5bZ6XjgjPTcSpYyzSRRFlDOXVThRmSyAhlCGNIWKIVJdIQTsfg5uAbh--abHyxZmViCEPahnGBqJwO0O0BMinmnKxrNsmvddo1GDX7fhvcHPulf6CNbP8</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Analysis of the Effect of Fast-Neutron Bombardment on the Current-Voltage Characteristic of a Conductivity-Modulated p-i-n Diode</title><source>AIP Digital Archive</source><creator>Swartz, John M. ; Thurston, Marlin O.</creator><creatorcontrib>Swartz, John M. ; Thurston, Marlin O. ; Phylatron Corp., Columbus, Ohio. Ohio State Univ., Columbus</creatorcontrib><description>Fast-neutron bombardment of silicon diodes changes the excess carrier diffusion length without significantly changing other diode parameters. Such bombardment is thus a useful tool for investigating diode theory. The technique is applied to an expression for the current-voltage characteristic developed for the wide-based p-i-n diode. For high level injection, there are two current density ranges of interest. First, a range where the base voltage is independent of current density and the total junction voltage V varies as exp(qV/2kT) with current. This region corresponds to unity emitter efficiency at each of the junctions. For higher current densities, the emitter efficiency decreases, and the base voltage increases as the square root of the current density. Also, the total junction voltage varies as exp(qV/kT) with current. The theoretical results are then shown to fit the current-voltage characteristics of experimental wide-based silicon p-i-n diodes.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.1708249</identifier><language>eng</language><subject>CURRENTS ; DIFFUSION LENGTH ; EFFICIENCY ; ELECTRIC CONDUCTIVITY ; ELECTRIC POTENTIAL ; EMISSION ; FAST NEUTRONS ; INJECTION ; INSTRUMENTATION ; MODULATION ; Radiation Effects ; SEMICONDUCTORS ; SILICON</subject><ispartof>Journal of Applied Physics (U.S.), 1966-02, Vol.37 (2), p.745-755</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c320t-be55e55a5ebfe8f5754cd5374b4a2829ec353f6914080c79c24407e2a9328c253</citedby><cites>FETCH-LOGICAL-c320t-be55e55a5ebfe8f5754cd5374b4a2829ec353f6914080c79c24407e2a9328c253</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,885,27923,27924</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/4570386$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Swartz, John M.</creatorcontrib><creatorcontrib>Thurston, Marlin O.</creatorcontrib><creatorcontrib>Phylatron Corp., Columbus, Ohio. Ohio State Univ., Columbus</creatorcontrib><title>Analysis of the Effect of Fast-Neutron Bombardment on the Current-Voltage Characteristic of a Conductivity-Modulated p-i-n Diode</title><title>Journal of Applied Physics (U.S.)</title><description>Fast-neutron bombardment of silicon diodes changes the excess carrier diffusion length without significantly changing other diode parameters. Such bombardment is thus a useful tool for investigating diode theory. The technique is applied to an expression for the current-voltage characteristic developed for the wide-based p-i-n diode. For high level injection, there are two current density ranges of interest. First, a range where the base voltage is independent of current density and the total junction voltage V varies as exp(qV/2kT) with current. This region corresponds to unity emitter efficiency at each of the junctions. For higher current densities, the emitter efficiency decreases, and the base voltage increases as the square root of the current density. Also, the total junction voltage varies as exp(qV/kT) with current. The theoretical results are then shown to fit the current-voltage characteristics of experimental wide-based silicon p-i-n diodes.</description><subject>CURRENTS</subject><subject>DIFFUSION LENGTH</subject><subject>EFFICIENCY</subject><subject>ELECTRIC CONDUCTIVITY</subject><subject>ELECTRIC POTENTIAL</subject><subject>EMISSION</subject><subject>FAST NEUTRONS</subject><subject>INJECTION</subject><subject>INSTRUMENTATION</subject><subject>MODULATION</subject><subject>Radiation Effects</subject><subject>SEMICONDUCTORS</subject><subject>SILICON</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1966</creationdate><recordtype>article</recordtype><recordid>eNotkM1KAzEUhYMoWKsL32Bw5yI1v02yrGOrQtWNuh0ymcRGpklJUqE7H92pLVy4HO7H4Z4DwDVGE4ym9A5PsECSMHUCRhhJBQXn6BSMECIYSiXUObjI-RshjCVVI_A7C7rfZZ-r6KqystXcOWvKXi10LvDVbkuKobqP61anbm3DcAv_ZL1NaZDwM_ZFfw16pZM2xSafizd7B13VMXRbU_yPLzv4Erttr4vtqg30MFQPPnb2Epw53Wd7ddxj8LGYv9dPcPn2-FzPltBQggpsLefDaG5bZ6XjgjPTcSpYyzSRRFlDOXVThRmSyAhlCGNIWKIVJdIQTsfg5uAbh--abHyxZmViCEPahnGBqJwO0O0BMinmnKxrNsmvddo1GDX7fhvcHPulf6CNbP8</recordid><startdate>19660201</startdate><enddate>19660201</enddate><creator>Swartz, John M.</creator><creator>Thurston, Marlin O.</creator><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>19660201</creationdate><title>Analysis of the Effect of Fast-Neutron Bombardment on the Current-Voltage Characteristic of a Conductivity-Modulated p-i-n Diode</title><author>Swartz, John M. ; Thurston, Marlin O.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c320t-be55e55a5ebfe8f5754cd5374b4a2829ec353f6914080c79c24407e2a9328c253</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1966</creationdate><topic>CURRENTS</topic><topic>DIFFUSION LENGTH</topic><topic>EFFICIENCY</topic><topic>ELECTRIC CONDUCTIVITY</topic><topic>ELECTRIC POTENTIAL</topic><topic>EMISSION</topic><topic>FAST NEUTRONS</topic><topic>INJECTION</topic><topic>INSTRUMENTATION</topic><topic>MODULATION</topic><topic>Radiation Effects</topic><topic>SEMICONDUCTORS</topic><topic>SILICON</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Swartz, John M.</creatorcontrib><creatorcontrib>Thurston, Marlin O.</creatorcontrib><creatorcontrib>Phylatron Corp., Columbus, Ohio. Ohio State Univ., Columbus</creatorcontrib><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Journal of Applied Physics (U.S.)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Swartz, John M.</au><au>Thurston, Marlin O.</au><aucorp>Phylatron Corp., Columbus, Ohio. Ohio State Univ., Columbus</aucorp><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Analysis of the Effect of Fast-Neutron Bombardment on the Current-Voltage Characteristic of a Conductivity-Modulated p-i-n Diode</atitle><jtitle>Journal of Applied Physics (U.S.)</jtitle><date>1966-02-01</date><risdate>1966</risdate><volume>37</volume><issue>2</issue><spage>745</spage><epage>755</epage><pages>745-755</pages><issn>0021-8979</issn><eissn>1089-7550</eissn><abstract>Fast-neutron bombardment of silicon diodes changes the excess carrier diffusion length without significantly changing other diode parameters. Such bombardment is thus a useful tool for investigating diode theory. The technique is applied to an expression for the current-voltage characteristic developed for the wide-based p-i-n diode. For high level injection, there are two current density ranges of interest. First, a range where the base voltage is independent of current density and the total junction voltage V varies as exp(qV/2kT) with current. This region corresponds to unity emitter efficiency at each of the junctions. For higher current densities, the emitter efficiency decreases, and the base voltage increases as the square root of the current density. Also, the total junction voltage varies as exp(qV/kT) with current. The theoretical results are then shown to fit the current-voltage characteristics of experimental wide-based silicon p-i-n diodes.</abstract><doi>10.1063/1.1708249</doi><tpages>11</tpages></addata></record> |
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| identifier | ISSN: 0021-8979 |
| ispartof | Journal of Applied Physics (U.S.), 1966-02, Vol.37 (2), p.745-755 |
| issn | 0021-8979 1089-7550 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_1708249 |
| source | AIP Digital Archive |
| subjects | CURRENTS DIFFUSION LENGTH EFFICIENCY ELECTRIC CONDUCTIVITY ELECTRIC POTENTIAL EMISSION FAST NEUTRONS INJECTION INSTRUMENTATION MODULATION Radiation Effects SEMICONDUCTORS SILICON |
| title | Analysis of the Effect of Fast-Neutron Bombardment on the Current-Voltage Characteristic of a Conductivity-Modulated p-i-n Diode |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-11T08%3A02%3A59IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref_osti_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Analysis%20of%20the%20Effect%20of%20Fast-Neutron%20Bombardment%20on%20the%20Current-Voltage%20Characteristic%20of%20a%20Conductivity-Modulated%20p-i-n%20Diode&rft.jtitle=Journal%20of%20Applied%20Physics%20(U.S.)&rft.au=Swartz,%20John%20M.&rft.aucorp=Phylatron%20Corp.,%20Columbus,%20Ohio.%20Ohio%20State%20Univ.,%20Columbus&rft.date=1966-02-01&rft.volume=37&rft.issue=2&rft.spage=745&rft.epage=755&rft.pages=745-755&rft.issn=0021-8979&rft.eissn=1089-7550&rft_id=info:doi/10.1063/1.1708249&rft_dat=%3Ccrossref_osti_%3E10_1063_1_1708249%3C/crossref_osti_%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |