GaN epitaxy on thermally treated c -plane bulk ZnO substrates with O and Zn faces

ZnO is considered as a promising substrate for GaN epitaxy because of stacking match and close lattice match to GaN. Traditionally, however, it suffered from poor surface preparation which hampered epitaxial growth in general and GaN in particular. In this work, ZnO substrates with atomically flat a...

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Veröffentlicht in:	Applied physics letters 2004-03, Vol.84 (13), p.2268-2270
Hauptverfasser:	Gu, Xing, Reshchikov, Michael A., Teke, Ali, Johnstone, Daniel, Morkoç, Hadis, Nemeth, Bill, Nause, Jeff
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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