Mapping of multiple-quantum-well layers and structure of V defects in InGaN/GaN diodes

Cathodoluminescence mapping reveals threading defects, frequently formed by the lattice misfit between GaN and sapphire substrate, as a dark contrast connected with changes in the energy state. Multiple quantum wells, 2.5 nm In0.25Ga0.75N and 13.9 nm GaN layers, are resolved in the secondary electro...

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Veröffentlicht in:	Applied physics letters 2004-03, Vol.84 (13), p.2271-2273
Hauptverfasser:	Saijo, H., Hsu, J. T., Tu, R. C., Yamada, M., Nakagawa, M., Yang, J. R., Shiojiri, M.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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