Application of strontium silicate yellow phosphor for white light-emitting diodes

In order to develop a yellow phosphor that emits efficiently under the 450–470 nm excitation range, we have synthesized a Eu2+-activated Sr3SiO5 yellow phosphor and attempted to develop white light-emitting diodes (LEDs) by combining them with a InGaN blue LED chip (460 nm). Two distinct emission ba...

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Veröffentlicht in:Applied physics letters 2004-03, Vol.84 (10), p.1647-1649
Hauptverfasser: Park, Joung Kyu, Kim, Chang Hae, Park, Seung Hyok, Park, Hee Dong, Choi, Se Young
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container_issue 10
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container_title Applied physics letters
container_volume 84
creator Park, Joung Kyu
Kim, Chang Hae
Park, Seung Hyok
Park, Hee Dong
Choi, Se Young
description In order to develop a yellow phosphor that emits efficiently under the 450–470 nm excitation range, we have synthesized a Eu2+-activated Sr3SiO5 yellow phosphor and attempted to develop white light-emitting diodes (LEDs) by combining them with a InGaN blue LED chip (460 nm). Two distinct emission bands from the InGaN-based LED and the Sr3SiO5:Eu phosphor are clearly observed at 460 nm and at 570 nm, respectively. These two emission bands combine to give a spectrum that appears white to the naked eye. Our results showed that InGaN (460 nm chip)-based Sr3SiO5:Eu exhibits a better luminous efficiency than that of the industrially available product InGaN (460 nm chip)-based YAG:Ce.
doi_str_mv 10.1063/1.1667620
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fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_1667620</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1063_1_1667620</sourcerecordid><originalsourceid>FETCH-LOGICAL-c293t-49d361e508d7b36bf63304ac2359f327ded4e42c5f5f25a0cf90a0740c8b2af53</originalsourceid><addsrcrecordid>eNotkEFLxDAUhIMoWFcP_oNcPXR9yWvS9rgs6goLIui5pGmyjbRNSSLL_nur7uFjmBmYwxByz2DNQOIjWzMpS8nhgmQMyjJHxqpLkgEA5rIW7JrcxPi1WMERM_K-mefBaZWcn6i3NKbgp-S-RxrdX27oyQyDP9K593EhULtw7N3SDO7Qp9yMLiU3HWjnfGfiLbmyaojm7qwr8vn89LHd5fu3l9ftZp9rXmPKi7pDyYyAqitblK2ViFAozVHUFnnZma4wBdfCCsuFAm1rUFAWoKuWKytwRR7-d3XwMQZjmzm4UYVTw6D5_aJhzfkL_AHFD1IY</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Application of strontium silicate yellow phosphor for white light-emitting diodes</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><creator>Park, Joung Kyu ; Kim, Chang Hae ; Park, Seung Hyok ; Park, Hee Dong ; Choi, Se Young</creator><creatorcontrib>Park, Joung Kyu ; Kim, Chang Hae ; Park, Seung Hyok ; Park, Hee Dong ; Choi, Se Young</creatorcontrib><description>In order to develop a yellow phosphor that emits efficiently under the 450–470 nm excitation range, we have synthesized a Eu2+-activated Sr3SiO5 yellow phosphor and attempted to develop white light-emitting diodes (LEDs) by combining them with a InGaN blue LED chip (460 nm). Two distinct emission bands from the InGaN-based LED and the Sr3SiO5:Eu phosphor are clearly observed at 460 nm and at 570 nm, respectively. These two emission bands combine to give a spectrum that appears white to the naked eye. Our results showed that InGaN (460 nm chip)-based Sr3SiO5:Eu exhibits a better luminous efficiency than that of the industrially available product InGaN (460 nm chip)-based YAG:Ce.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.1667620</identifier><language>eng</language><ispartof>Applied physics letters, 2004-03, Vol.84 (10), p.1647-1649</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c293t-49d361e508d7b36bf63304ac2359f327ded4e42c5f5f25a0cf90a0740c8b2af53</citedby><cites>FETCH-LOGICAL-c293t-49d361e508d7b36bf63304ac2359f327ded4e42c5f5f25a0cf90a0740c8b2af53</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Park, Joung Kyu</creatorcontrib><creatorcontrib>Kim, Chang Hae</creatorcontrib><creatorcontrib>Park, Seung Hyok</creatorcontrib><creatorcontrib>Park, Hee Dong</creatorcontrib><creatorcontrib>Choi, Se Young</creatorcontrib><title>Application of strontium silicate yellow phosphor for white light-emitting diodes</title><title>Applied physics letters</title><description>In order to develop a yellow phosphor that emits efficiently under the 450–470 nm excitation range, we have synthesized a Eu2+-activated Sr3SiO5 yellow phosphor and attempted to develop white light-emitting diodes (LEDs) by combining them with a InGaN blue LED chip (460 nm). Two distinct emission bands from the InGaN-based LED and the Sr3SiO5:Eu phosphor are clearly observed at 460 nm and at 570 nm, respectively. These two emission bands combine to give a spectrum that appears white to the naked eye. Our results showed that InGaN (460 nm chip)-based Sr3SiO5:Eu exhibits a better luminous efficiency than that of the industrially available product InGaN (460 nm chip)-based YAG:Ce.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2004</creationdate><recordtype>article</recordtype><recordid>eNotkEFLxDAUhIMoWFcP_oNcPXR9yWvS9rgs6goLIui5pGmyjbRNSSLL_nur7uFjmBmYwxByz2DNQOIjWzMpS8nhgmQMyjJHxqpLkgEA5rIW7JrcxPi1WMERM_K-mefBaZWcn6i3NKbgp-S-RxrdX27oyQyDP9K593EhULtw7N3SDO7Qp9yMLiU3HWjnfGfiLbmyaojm7qwr8vn89LHd5fu3l9ftZp9rXmPKi7pDyYyAqitblK2ViFAozVHUFnnZma4wBdfCCsuFAm1rUFAWoKuWKytwRR7-d3XwMQZjmzm4UYVTw6D5_aJhzfkL_AHFD1IY</recordid><startdate>20040308</startdate><enddate>20040308</enddate><creator>Park, Joung Kyu</creator><creator>Kim, Chang Hae</creator><creator>Park, Seung Hyok</creator><creator>Park, Hee Dong</creator><creator>Choi, Se Young</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20040308</creationdate><title>Application of strontium silicate yellow phosphor for white light-emitting diodes</title><author>Park, Joung Kyu ; Kim, Chang Hae ; Park, Seung Hyok ; Park, Hee Dong ; Choi, Se Young</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c293t-49d361e508d7b36bf63304ac2359f327ded4e42c5f5f25a0cf90a0740c8b2af53</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2004</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Park, Joung Kyu</creatorcontrib><creatorcontrib>Kim, Chang Hae</creatorcontrib><creatorcontrib>Park, Seung Hyok</creatorcontrib><creatorcontrib>Park, Hee Dong</creatorcontrib><creatorcontrib>Choi, Se Young</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Park, Joung Kyu</au><au>Kim, Chang Hae</au><au>Park, Seung Hyok</au><au>Park, Hee Dong</au><au>Choi, Se Young</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Application of strontium silicate yellow phosphor for white light-emitting diodes</atitle><jtitle>Applied physics letters</jtitle><date>2004-03-08</date><risdate>2004</risdate><volume>84</volume><issue>10</issue><spage>1647</spage><epage>1649</epage><pages>1647-1649</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>In order to develop a yellow phosphor that emits efficiently under the 450–470 nm excitation range, we have synthesized a Eu2+-activated Sr3SiO5 yellow phosphor and attempted to develop white light-emitting diodes (LEDs) by combining them with a InGaN blue LED chip (460 nm). Two distinct emission bands from the InGaN-based LED and the Sr3SiO5:Eu phosphor are clearly observed at 460 nm and at 570 nm, respectively. These two emission bands combine to give a spectrum that appears white to the naked eye. Our results showed that InGaN (460 nm chip)-based Sr3SiO5:Eu exhibits a better luminous efficiency than that of the industrially available product InGaN (460 nm chip)-based YAG:Ce.</abstract><doi>10.1063/1.1667620</doi><tpages>3</tpages></addata></record>
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title Application of strontium silicate yellow phosphor for white light-emitting diodes
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-29T13%3A05%3A51IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Application%20of%20strontium%20silicate%20yellow%20phosphor%20for%20white%20light-emitting%20diodes&rft.jtitle=Applied%20physics%20letters&rft.au=Park,%20Joung%20Kyu&rft.date=2004-03-08&rft.volume=84&rft.issue=10&rft.spage=1647&rft.epage=1649&rft.pages=1647-1649&rft.issn=0003-6951&rft.eissn=1077-3118&rft_id=info:doi/10.1063/1.1667620&rft_dat=%3Ccrossref%3E10_1063_1_1667620%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true