Magnetization chirality due to asymmetrical structure in Ni-Fe annular dots for high-density memory cells
Ni–Fe asymmetric ring dots with partially planed outer sides were investigated as candidates for high-density magnetic memory cells. The magnetic states, which were measured with magnetic force microscopy, show that in-plane magnetic fields can control the chirality, either clockwise or counterclock...
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Veröffentlicht in: | Journal of applied physics 2004-06, Vol.95 (11), p.6714-6716 |
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container_title | Journal of applied physics |
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creator | Nakatani, Ryoichi Yoshida, Tetsuo Endo, Yasushi Kawamura, Yoshio Yamamoto, Masahiko Takenaga, Takashi Aya, Sunao Kuroiwa, Takeharu Beysen, Sadeh Kobayashi, Hiroshi |
description | Ni–Fe asymmetric ring dots with partially planed outer sides were investigated as candidates for high-density magnetic memory cells. The magnetic states, which were measured with magnetic force microscopy, show that in-plane magnetic fields can control the chirality, either clockwise or counterclockwise, of vortical magnetizations of the Ni–Fe asymmetric ring dots. This control facilitates applying ring dots to the magnetic random access memories. |
doi_str_mv | 10.1063/1.1667433 |
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The magnetic states, which were measured with magnetic force microscopy, show that in-plane magnetic fields can control the chirality, either clockwise or counterclockwise, of vortical magnetizations of the Ni–Fe asymmetric ring dots. This control facilitates applying ring dots to the magnetic random access memories.</abstract><doi>10.1063/1.1667433</doi><tpages>3</tpages><oa>free_for_read</oa></addata></record> |
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title | Magnetization chirality due to asymmetrical structure in Ni-Fe annular dots for high-density memory cells |
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