Magnetization chirality due to asymmetrical structure in Ni-Fe annular dots for high-density memory cells

Ni–Fe asymmetric ring dots with partially planed outer sides were investigated as candidates for high-density magnetic memory cells. The magnetic states, which were measured with magnetic force microscopy, show that in-plane magnetic fields can control the chirality, either clockwise or counterclock...

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Veröffentlicht in:Journal of applied physics 2004-06, Vol.95 (11), p.6714-6716
Hauptverfasser: Nakatani, Ryoichi, Yoshida, Tetsuo, Endo, Yasushi, Kawamura, Yoshio, Yamamoto, Masahiko, Takenaga, Takashi, Aya, Sunao, Kuroiwa, Takeharu, Beysen, Sadeh, Kobayashi, Hiroshi
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container_end_page 6716
container_issue 11
container_start_page 6714
container_title Journal of applied physics
container_volume 95
creator Nakatani, Ryoichi
Yoshida, Tetsuo
Endo, Yasushi
Kawamura, Yoshio
Yamamoto, Masahiko
Takenaga, Takashi
Aya, Sunao
Kuroiwa, Takeharu
Beysen, Sadeh
Kobayashi, Hiroshi
description Ni–Fe asymmetric ring dots with partially planed outer sides were investigated as candidates for high-density magnetic memory cells. The magnetic states, which were measured with magnetic force microscopy, show that in-plane magnetic fields can control the chirality, either clockwise or counterclockwise, of vortical magnetizations of the Ni–Fe asymmetric ring dots. This control facilitates applying ring dots to the magnetic random access memories.
doi_str_mv 10.1063/1.1667433
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fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_1667433</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1063_1_1667433</sourcerecordid><originalsourceid>FETCH-LOGICAL-c366t-6f4c08bd038b6bec1c088ca26e744d23a9fb1a9897b826175bb0ec4fb3fd6b613</originalsourceid><addsrcrecordid>eNotkL1OwzAURi0EEqEw8AZeGVx848RxRlRRilRggTmynevGKD_Idobw9LSi06dvOdI5hNwDXwOX4hHWIGVVCHFBMuCqZlVZ8kuScZ4DU3VVX5ObGL85B1Cizoh_04cRk__VyU8jtZ0Puvdpoe2MNE1Ux2UYMAVvdU9jCrNNc0DqR_ru2RapHse514G2U4rUTYF2_tCxFsd4ggw4TGGhFvs-3pIrp_uId-ddka_t8-dmx_YfL6-bpz2zQsrEpCssV6blQhlp0MLxKatziVVRtLnQtTOg66OKUbmEqjSGoy2cEa6VRoJYkYd_rg1TjAFd8xP8oMPSAG9OjRpozo3EH04jW1o</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Magnetization chirality due to asymmetrical structure in Ni-Fe annular dots for high-density memory cells</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><creator>Nakatani, Ryoichi ; Yoshida, Tetsuo ; Endo, Yasushi ; Kawamura, Yoshio ; Yamamoto, Masahiko ; Takenaga, Takashi ; Aya, Sunao ; Kuroiwa, Takeharu ; Beysen, Sadeh ; Kobayashi, Hiroshi</creator><creatorcontrib>Nakatani, Ryoichi ; Yoshida, Tetsuo ; Endo, Yasushi ; Kawamura, Yoshio ; Yamamoto, Masahiko ; Takenaga, Takashi ; Aya, Sunao ; Kuroiwa, Takeharu ; Beysen, Sadeh ; Kobayashi, Hiroshi</creatorcontrib><description>Ni–Fe asymmetric ring dots with partially planed outer sides were investigated as candidates for high-density magnetic memory cells. The magnetic states, which were measured with magnetic force microscopy, show that in-plane magnetic fields can control the chirality, either clockwise or counterclockwise, of vortical magnetizations of the Ni–Fe asymmetric ring dots. This control facilitates applying ring dots to the magnetic random access memories.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.1667433</identifier><language>eng</language><ispartof>Journal of applied physics, 2004-06, Vol.95 (11), p.6714-6716</ispartof><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c366t-6f4c08bd038b6bec1c088ca26e744d23a9fb1a9897b826175bb0ec4fb3fd6b613</citedby><cites>FETCH-LOGICAL-c366t-6f4c08bd038b6bec1c088ca26e744d23a9fb1a9897b826175bb0ec4fb3fd6b613</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Nakatani, Ryoichi</creatorcontrib><creatorcontrib>Yoshida, Tetsuo</creatorcontrib><creatorcontrib>Endo, Yasushi</creatorcontrib><creatorcontrib>Kawamura, Yoshio</creatorcontrib><creatorcontrib>Yamamoto, Masahiko</creatorcontrib><creatorcontrib>Takenaga, Takashi</creatorcontrib><creatorcontrib>Aya, Sunao</creatorcontrib><creatorcontrib>Kuroiwa, Takeharu</creatorcontrib><creatorcontrib>Beysen, Sadeh</creatorcontrib><creatorcontrib>Kobayashi, Hiroshi</creatorcontrib><title>Magnetization chirality due to asymmetrical structure in Ni-Fe annular dots for high-density memory cells</title><title>Journal of applied physics</title><description>Ni–Fe asymmetric ring dots with partially planed outer sides were investigated as candidates for high-density magnetic memory cells. The magnetic states, which were measured with magnetic force microscopy, show that in-plane magnetic fields can control the chirality, either clockwise or counterclockwise, of vortical magnetizations of the Ni–Fe asymmetric ring dots. This control facilitates applying ring dots to the magnetic random access memories.</description><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2004</creationdate><recordtype>article</recordtype><recordid>eNotkL1OwzAURi0EEqEw8AZeGVx848RxRlRRilRggTmynevGKD_Idobw9LSi06dvOdI5hNwDXwOX4hHWIGVVCHFBMuCqZlVZ8kuScZ4DU3VVX5ObGL85B1Cizoh_04cRk__VyU8jtZ0Puvdpoe2MNE1Ux2UYMAVvdU9jCrNNc0DqR_ru2RapHse514G2U4rUTYF2_tCxFsd4ggw4TGGhFvs-3pIrp_uId-ddka_t8-dmx_YfL6-bpz2zQsrEpCssV6blQhlp0MLxKatziVVRtLnQtTOg66OKUbmEqjSGoy2cEa6VRoJYkYd_rg1TjAFd8xP8oMPSAG9OjRpozo3EH04jW1o</recordid><startdate>20040601</startdate><enddate>20040601</enddate><creator>Nakatani, Ryoichi</creator><creator>Yoshida, Tetsuo</creator><creator>Endo, Yasushi</creator><creator>Kawamura, Yoshio</creator><creator>Yamamoto, Masahiko</creator><creator>Takenaga, Takashi</creator><creator>Aya, Sunao</creator><creator>Kuroiwa, Takeharu</creator><creator>Beysen, Sadeh</creator><creator>Kobayashi, Hiroshi</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20040601</creationdate><title>Magnetization chirality due to asymmetrical structure in Ni-Fe annular dots for high-density memory cells</title><author>Nakatani, Ryoichi ; Yoshida, Tetsuo ; Endo, Yasushi ; Kawamura, Yoshio ; Yamamoto, Masahiko ; Takenaga, Takashi ; Aya, Sunao ; Kuroiwa, Takeharu ; Beysen, Sadeh ; Kobayashi, Hiroshi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c366t-6f4c08bd038b6bec1c088ca26e744d23a9fb1a9897b826175bb0ec4fb3fd6b613</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2004</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Nakatani, Ryoichi</creatorcontrib><creatorcontrib>Yoshida, Tetsuo</creatorcontrib><creatorcontrib>Endo, Yasushi</creatorcontrib><creatorcontrib>Kawamura, Yoshio</creatorcontrib><creatorcontrib>Yamamoto, Masahiko</creatorcontrib><creatorcontrib>Takenaga, Takashi</creatorcontrib><creatorcontrib>Aya, Sunao</creatorcontrib><creatorcontrib>Kuroiwa, Takeharu</creatorcontrib><creatorcontrib>Beysen, Sadeh</creatorcontrib><creatorcontrib>Kobayashi, Hiroshi</creatorcontrib><collection>CrossRef</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Nakatani, Ryoichi</au><au>Yoshida, Tetsuo</au><au>Endo, Yasushi</au><au>Kawamura, Yoshio</au><au>Yamamoto, Masahiko</au><au>Takenaga, Takashi</au><au>Aya, Sunao</au><au>Kuroiwa, Takeharu</au><au>Beysen, Sadeh</au><au>Kobayashi, Hiroshi</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Magnetization chirality due to asymmetrical structure in Ni-Fe annular dots for high-density memory cells</atitle><jtitle>Journal of applied physics</jtitle><date>2004-06-01</date><risdate>2004</risdate><volume>95</volume><issue>11</issue><spage>6714</spage><epage>6716</epage><pages>6714-6716</pages><issn>0021-8979</issn><eissn>1089-7550</eissn><abstract>Ni–Fe asymmetric ring dots with partially planed outer sides were investigated as candidates for high-density magnetic memory cells. The magnetic states, which were measured with magnetic force microscopy, show that in-plane magnetic fields can control the chirality, either clockwise or counterclockwise, of vortical magnetizations of the Ni–Fe asymmetric ring dots. This control facilitates applying ring dots to the magnetic random access memories.</abstract><doi>10.1063/1.1667433</doi><tpages>3</tpages><oa>free_for_read</oa></addata></record>
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title Magnetization chirality due to asymmetrical structure in Ni-Fe annular dots for high-density memory cells
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-09T03%3A32%3A02IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Magnetization%20chirality%20due%20to%20asymmetrical%20structure%20in%20Ni-Fe%20annular%20dots%20for%20high-density%20memory%20cells&rft.jtitle=Journal%20of%20applied%20physics&rft.au=Nakatani,%20Ryoichi&rft.date=2004-06-01&rft.volume=95&rft.issue=11&rft.spage=6714&rft.epage=6716&rft.pages=6714-6716&rft.issn=0021-8979&rft.eissn=1089-7550&rft_id=info:doi/10.1063/1.1667433&rft_dat=%3Ccrossref%3E10_1063_1_1667433%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true