Sensitivity of Pt/ZnO Schottky diode characteristics to hydrogen

Sensitivity of Pt/ZnO Schottky diode characteristics to hydrogen

Pt/ZnO Schottky diodes show changes in forward current of 0.3 mA at a forward bias of 0.5 V or alternatively a change of 50 mV bias at a fixed forward current of 8 mA when 5 ppm of H2 is introduced into a N2 ambient at 25 °C. The rectifying current–voltage (I–V) characteristic shows a nonreversible...

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Veröffentlicht in:Applied physics letters 2004-03, Vol.84 (10), p.1698-1700
Hauptverfasser: Kim, Suku, Kang, B. S., Ren, F., Ip, K., Heo, Y. W., Norton, D. P., Pearton, S. J.
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container_end_page 1700
container_issue 10
container_start_page 1698
container_title Applied physics letters
container_volume 84
creator Kim, Suku
Kang, B. S.
Ren, F.
Ip, K.
Heo, Y. W.
Norton, D. P.
Pearton, S. J.
description Pt/ZnO Schottky diodes show changes in forward current of 0.3 mA at a forward bias of 0.5 V or alternatively a change of 50 mV bias at a fixed forward current of 8 mA when 5 ppm of H2 is introduced into a N2 ambient at 25 °C. The rectifying current–voltage (I–V) characteristic shows a nonreversible collapse to Ohmic behavior when as little as 50 ppm of H2 is present in the N2 ambient. At higher temperatures, the recovery is thermally activated with an activation energy of ∼0.25 eV. This suggests that introduction of hydrogen shallow donors into the ZnO is a contributor to the change in current of the diodes.
doi_str_mv 10.1063/1.1664012
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title Sensitivity of Pt/ZnO Schottky diode characteristics to hydrogen
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