Optical and channeling studies of ion-bombarded GaP

Below-gap optical absorption, above-gap reflectivity, photoluminescence, and He ion channeling backscattering measurements are reported for ion-bombarded GaP. Each of the four experiments provides a measure of disorder. A one-to-one correspondence exists between the absorption, reflectivity, and bac...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	J. Appl. Phys., v. 45, no. 4, pp. 1578-1589 v. 45, no. 4, pp. 1578-1589, 1974-04, Vol.45 (4), p.1578-1589
Hauptverfasser:	Wemple, S. H., North, J. C., Dishman, J. M.
Format:	Artikel
Sprache:	eng
Schlagworte:	AMORPHOUS STATE ANNEALING BACKSCATTERING CRYSTAL DOPING DOPED MATERIALS GALLIUM PHOSPHIDES- PHYSICAL RADIATION EFFECTS HELIUM IONS ION CHANNELING ION IMPLANTATION N50340 -Metals, Ceramics, & Other Materials-Plastics & Other Materials-Radiation Effects RADIATION DOSES ZINC OXIDES
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!